Appendix A Electrical Characteristics
MC9S12XE-Family Reference Manual Rev. 1.21
Freescale Semiconductor
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indicated here currently are not available from Freescale for import or sale in the United States prior to September 2010
A.3.2
NVM Reliability Parameters
The reliability of the NVM blocks is guaranteed by stress test during qualication, constant process
monitors and burn-in to screen early life failures.
The data retention and program/erase cycling failure rates are specied at the operating conditions noted.
The program/erase cycle count on the sector is incremented every time a sector or mass erase event is
executed.
The standard shipping condition for both the D-Flash and P-Flash memory is erased with security disabled.
However it is recommended that each block or sector is erased before factory programming to ensure that
the full data retention capability is achieved. Data retention time is measured from the last erase operation.
Table A-20. NVM Reliability Characteristics
Conditions are shown in
Table A-4 unless otherwise noted
Num
C
Rating
Symbol
Min
Typ
Max
Unit
P-Flash Arrays
1
C Data retention at an average junction temperature of TJavg =
85
°C1 after up to 10,000 program/erase cycles
tPNVMRET
15
1002
—
Years
2
C Data retention at an average junction temperature of TJavg =
85
°C3 after less than 100 program/erase cycles
tPNVMRET
20
—
Years
3
C P-Flash number of program/erase cycles
(-40
°C ≤ tj ≤ 150°C)
nPFLPE
10K
—
Cycles
D-Flash Array
4
C Data retention at an average junction temperature of TJavg =
85
°C
3 after up to 50,000 program/erase cycles
tDNVMRET
5
—
Years
5
C Data retention at an average junction temperature of TJavg =
85
°C
3 after less than 10,000 program/erase cycles
tDNVMRET
10
—
Years
6
C Data retention at an average junction temperature of TJavg =
85
°C
3 after less than 100 program/erase cycles
tDNVMRET
20
—
Years
7
C D-Flash number of program/erase cycles (-40
°C ≤ tj ≤ 150°C)
nDFLPE
50K
—
Cycles
Emulated EEPROM
8
C Data retention at an average junction temperature of TJavg =
85
°C
1after spec. program/erase cycles
tEENVMRET
—
Years
9
C Data retention at an average junction temperature of TJavg =
85
°C
3 after less than 20% spec.program/erase cycles.
(e.g. after <20,000 cycles / Spec 100,000 cycles)
tEENVMRET
10
—
Years
10
C Data retention at an average junction temperature of TJavg =
85
°C
3 after less than 0.2% spec. program/erase cycles
(e.g. after < 200 cycles / Spec 100,000 cycles)
tEENVMRET
20
—
Years
11
C EEPROM number of program/erase cycles with a ratio of
EEE_NVM to EEE_RAM = 8 (-40
°C ≤ tj ≤ 150°C)
nEEPE
100K4
1M5
—
Cycles
12
C EEPROM number of program/erase cycles with a ratio of
EEE_NVM to EEE_RAM = 128 (-40
°C ≤ tj ≤ 150°C)
nEEPE
—
Cycles
13
C EEPROM number of program/erase cycles with a ratio of
EEE_NVM to EEE_RAM = 163846 (-40
°C ≤ tj ≤ 150°C)
nEEPE
—
Cycles