參數(shù)資料
型號： MC56F8335MFGE
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 數(shù)字信號處理
英文描述： 4-BIT, 120 MHz, OTHER DSP, PQFP128
封裝： ROHS COMPLIANT, PLASTIC, LQFP-128
文件頁數(shù)： 33/164頁
文件大?。?/td> 871K
代理商： MC56F8335MFGE
56F8335 Technical Data, Rev. 5
128
Freescale Semiconductor
Preliminary
1. Theta-JA determined on 2s2p test boards is frequently lower than would be observed in an application. Determined on 2s2p ther-
mal test board.
2. Junction to ambient thermal resistance, Theta-JA (RθJA) was simulated to be equivalent to the JEDEC specification JESD51-2
in a horizontal configuration in natural convection. Theta-JA was also simulated on a thermal test board with two internal planes
(2s2p, where “s” is the number of signal layers and “p” is the number of planes) per JESD51-6 and JESD51-7. The correct name
for Theta-JA for forced convection or with the non-single layer boards is Theta-JMA.
3. Junction to case thermal resistance, Theta-JC (RθJC ), was simulated to be equivalent to the measured values using the cold
plate technique with the cold plate temperature used as the "case" temperature. The basic cold plate measurement technique is
described by MIL-STD 883D, Method 1012.1. This is the correct thermal metric to use to calculate thermal performance when
the package is being used with a heat sink.
4. Thermal Characterization Parameter, Psi-JT (
Ψ
JT ), is the "resistance" from junction to reference point thermocouple on top cen-
ter of case as defined in JESD51-2.
Ψ
JT is a useful value to use to estimate junction temperature in steady-state customer en-
vironments.
5. Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board) temperature,
ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
6. See Part 12.1 for more details on thermal design considerations.
Table 10-2 ElectroStatic Discharge (ESD) Protection
Characteristic
Min
Typ
Max
Unit
ESD for Human Body Model (HBM)
2000
—
V
ESD for Machine Model (MM)
200
—
V
ESD for Charge Device Model (CDM)
500
—
V
Table 10-3 Thermal Characteristics6
Characteristic
Comments
Symbol
Value
Unit
Notes
128-pin LQFP
Junction to ambient
Natural convection
RθJA
50.8
°C/W
2
Junction to ambient (@1m/sec)
RθJMA
46.5
°C/W
2
Junction to ambient
Natural convection
Four layer board (2s2p)
RθJMA
(2s2p)
43.9
°C/W
1,2
Junction to ambient (@1m/sec)
Four layer board (2s2p)
RθJMA
41.7
°C/W
1,2
Junction to case
RθJC
13.9
°C/W
3
Junction to center of case
Ψ
JT
1.2
°C/W
4, 5
I/O pin power dissipation
P I/O
User-determined
W
Power dissipation
P D
P D = (IDD x VDD + P I/O)W
Maximum allowed PD
PDMAX
(TJ - TA) / R
θJA7
W
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