參數(shù)資料
型號: MC56F8347VVFE
廠商: Freescale Semiconductor
文件頁數(shù): 36/172頁
文件大?。?/td> 0K
描述: IC DGTL SIGNAL CTLR 160-MAPBGA
標(biāo)準(zhǔn)包裝: 126
系列: 56F8xxx
核心處理器: 56800E
芯體尺寸: 16-位
速度: 60MHz
連通性: CAN,EBI/EMI,SCI,SPI
外圍設(shè)備: POR,PWM,溫度傳感器,WDT
輸入/輸出數(shù): 76
程序存儲器容量: 136KB(68K x 16)
程序存儲器類型: 閃存
RAM 容量: 6K x 16
電壓 - 電源 (Vcc/Vdd): 2.25 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 16x12b
振蕩器型: 外部
工作溫度: -40°C ~ 105°C
封裝/外殼: 160-BGA
包裝: 托盤
配用: MC56F8367EVME-ND - EVAL BOARD FOR MC56F83X
56F8347 Technical Data, Rev.11
130
Freescale Semiconductor
Preliminary
1. Theta-JA determined on 2s2p test boards is frequently lower than would be observed in an application. Determined on 2s2p ther-
mal test board.
2. Junction to ambient thermal resistance, Theta-JA (RθJA) was simulated to be equivalent to the JEDEC specification JESD51-2
in a horizontal configuration in natural convection. Theta-JA was also simulated on a thermal test board with two internal planes
(2s2p, where “s” is the number of signal layers and “p” is the number of planes) per JESD51-6 and JESD51-7. The correct name
for Theta-JA for forced convection or with the non-single layer boards is Theta-JMA.
3. Junction to case thermal resistance, Theta-JC (RθJC ), was simulated to be equivalent to the measured values using the cold
plate technique with the cold plate temperature used as the "case" temperature. The basic cold plate measurement technique is
described by MIL-STD 883D, Method 1012.1. This is the correct thermal metric to use to calculate thermal performance when
the package is being used with a heat sink.
4. Thermal Characterization Parameter, Psi-JT (
ΨJT), is the "resistance" from junction to reference point thermocouple on top center
of case as defined in JESD51-2.
ΨJT is a useful value to use to estimate junction temperature in steady-state customer environ-
ments.
5. Junction temperature is a function of on-chip power dissipation, package thermal resistance, mounting site (board) temperature,
ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance.
6. See Part 12.1 for more details on thermal design considerations.
7. TJ = Junction temperature
TA = Ambient temperature
TBD = numbers will be available late Q4 2005
Table 10-2 56F8347/56F8147 Electrostatic Discharge (ESD) Protection
Characteristic
Min
Typ
Max
Unit
ESD for Human Body Model (HBM)
2000
V
ESD for Machine Model (MM)
200
V
ESD for Charge Device Model (CDM)
500
V
Table 10-3 Thermal Characteristics6
Characteristic
Comments
Symbol
Value
Unit
Notes
160-pin LQFP
160MAPBGA
Junction to ambient
Natural convection
RθJA
38.5
34.66
°C/W
2
Junction to ambient (@1m/sec)
RθJMA
35.4
31.24
°C/W
2
Junction to ambient
Natural convection
Four layer board (2s2p)
RθJMA
(2s2p)
33
TBD
°C/W
1, 2
Junction to ambient (@1m/sec)
Four layer board (2s2p)
RθJMA
(2s2p)
31.5
TBD
°C/W
1, 2
Junction to case
RθJC
8.6
TBD
°C/W
3
Junction to center of case
ΨJT
0.8
TBD
°C/W
4, 5
I/O pin power dissipation
P I/O
User-determined
W
Power dissipation
P D
P D = (IDD x VDD + P I/O)W
Maximum allowed PD
PDMAX
(TJ - TA) / R
θJA7
W
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