參數(shù)資料
型號(hào)： MC7445ARX1000LG
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RISC Microprocessor Hardware Specifications
中文描述： RISC微處理器硬件規(guī)格
文件頁(yè)數(shù)： 58/64頁(yè)
文件大小： 1127K
代理商： MC7445ARX1000LG
MPC7455 RISC Microprocessor Hardware Specifications, Rev. 4.1
58
Freescale Semiconductor
System Design Information
temperature—airflow, board population (local heat flux of adjacent components), heat sink efficiency, heat sink
attach, heat sink placement, next-level interconnect technology, system air temperature rise, altitude, etc.
Due to the complexity and the many variations of system-level boundary conditions for today's microelectronic
equipment, the combined effects of the heat transfer mechanisms (radiation, convection, and conduction) may vary
widely. For these reasons, we recommend using conjugate heat transfer models for the board, as well as system-level
designs.
For system thermal modeling, the MPC7445 and MPC7455 thermal model is shown in
Figure 30
. Four volumes will
be used to represent this device. Two of the volumes, solder ball, and air and substrate, are modeled using the
package outline size of the package. The other two, die, and bump and underfill, have the same size as the die.
Dimensions for these volumes for the MPC7445 and MPC7455 are given in
Figure 20
and
Figure 22
, respectively.
The silicon die should be modeled 9.10
×
12.25
×
0.74 mm with the heat source applied as a uniform source at the
bottom of the volume. The bump and underfill layer is modeled as 9.10
×
12.25
×
0.069 mm (or as a collapsed
volume) with orthotropic material properties: 0.6 W/(m K) in the xy-plane and 2 W/(m K) in the direction of the
z-axis. The substrate volume is 25
×
25
×
1.2 mm (MPC7445) or 29
×
29
×
1.2 mm (MPC7455), and this volume
has 18 W/(m K) isotropic conductivity. The solder ball and air layer is modeled with the same horizontal
dimensions as the substrate and is 0.9 mm thick. It can also be modeled as a collapsed volume using orthotropic
material properties: 0.034 W/(m K) in the xy-plane direction and 3.8 W/(m K) in the direction of the z-axis.
Figure 30. Recommended Thermal Model of MPC7445 and MPC7455
Bump and Underfill
Die
Substrate
Solder and Air
Die
Substrate
Side View of Model (Not to Scale)
Top View of Model (Not to Scale)
x
y
z
Conductivity
Value
Unit
Bump and Underfill
k
x
0.6
W/(m K)
k
y
0.6
k
z
2
Substrate
k
18
Solder Ball and Air
k
x
0.034
k
y
0.034
k
z
3.8
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