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參數(shù)資料
| 型號： | MC9S08LL16CLF |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 微控制器/微處理器 |
| 英文描述： | 8-BIT, FLASH, 20 MHz, MICROCONTROLLER, PQFP48 |
| 封裝： | ROHS COMPLIANT, LQFP-48 |
| 文件頁數(shù)： | 35/44頁 |
| 文件大小： | 951K |
| 代理商： | MC9S08LL16CLF |
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MC9S08LL16 Series MCU Data Sheet, Rev. 6
Electrical Characteristics
Freescale Semiconductor
40
3.15
EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
3.15.1
Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell
method in accordance with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed
with the microcontroller installed on a custom EMC evaluation board while running specialized EMC test
software. The radiated emissions from the microcontroller are measured in a TEM cell in two package
orientations (North and East).
Table 20. Flash Characteristics
C
Characteristic
Symbol
Min
Typical
Max
Unit
D
Supply voltage for program/erase
-40
C to 85CV
prog/erase
1.8
3.6
V
D
Supply voltage for read operation
VRead
1.8
3.6
V
D
Internal FCLK frequency1
1
The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
Internal FCLK period (1/FCLK)
tFcyc
56.67
s
P
Byte program time (random location)2
tprog
9tFcyc
P
Byte program time (burst mode)2
tBurst
4tFcyc
P
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
tPage
4000
tFcyc
P
Mass erase time2
tMass
20,000
tFcyc
D
Byte program current3
3 The program and erase currents are additional to the standard run I
DD. These values are measured at room temperatures
with VDD = 3.0 V, bus frequency = 4.0 MHz.
RIDDBP
—4
—
mA
D
Page erase current3
RIDDPE
—6
—
mA
C
Program/erase endurance4
TL to TH = –40C to + 85C
T = 25
C
4
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
10,000
—
100,000
—
cycles
C
Data retention5
5
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated
to 25
C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please
refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
—
years
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MC9S08LL16CLF | 制造商:Freescale Semiconductor 功能描述:IC 8BIT MCU HCS08 20MHZ LQFP-48 |
| MC9S08LL16CLFR | 制造商:Freescale Semiconductor 功能描述:8-BIT HCS08 CISC 16KB FLASH 2.5V/3.3V 48-PIN LQFP T/R - Tape and Reel |
| MC9S08LL16CLH | 功能描述:8位微控制器 -MCU 8BIT 16KFLASH 2KRAM RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
| MC9S08LL36 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:Technical Data |
| MC9S08LL36CLH | 功能描述:8位微控制器 -MCU S08 CPU, 36K FLASH, 64LQFP RoHS:否 制造商:Silicon Labs 核心:8051 處理器系列:C8051F39x 數(shù)據(jù)總線寬度:8 bit 最大時鐘頻率:50 MHz 程序存儲器大小:16 KB 數(shù)據(jù) RAM 大小:1 KB 片上 ADC:Yes 工作電源電壓:1.8 V to 3.6 V 工作溫度范圍:- 40 C to + 105 C 封裝 / 箱體:QFN-20 安裝風(fēng)格:SMD/SMT |
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