參數(shù)資料
型號(hào): MC9S08MM128VLH
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 8-BIT, FLASH, 48 MHz, MICROCONTROLLER, PQFP64
封裝: 10 X 10 MM, 1.60 MM HEIGHT, ROHS COMPLIANT, LQFP-64
文件頁數(shù): 36/50頁
文件大小: 970K
代理商: MC9S08MM128VLH
Preliminary Electrical Characteristics
Freescale Semiconductor
41
2.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash memory.
Program and erase operations do not require any special power sources other than the normal VDD supply. For more detailed
information about program/erase operations, see the Memory chapter in the Reference Manual for this device
(MC9S08MM128RM).
Table 22. Flash Characteristics
#
Characteristic
Symbol
Min
Typical
Max
Unit
C
1
Supply voltage for program/erase
-40
°C to 105°CV
prog/erase
1.8
3.6
V
D
2
Supply voltage for read operation
VRead
1.8
3.6
V
D
3
Internal FCLK frequency1
1 The frequency of this clock is controlled by a software setting.
fFCLK
150
200
kHz
D
4
Internal FCLK period (1/FCLK)
tFcyc
5
6.67
μsD
5
Byte program time (random location)2
tprog
9tFcyc
P
6
Byte program time (burst mode)2
tBurst
4tFcyc
P
7
Page erase time2
2 These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for
calculating approximate time to program and erase.
tPage
4000
tFcyc
P
8
Mass erase time2
tMass
20,000
tFcyc
P
9
Program/erase endurance3
TL to TH = –40°C to + 105°C
T = 25
°C
3 Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile Memory.
10,000
100,000
cycles
C
10
Data retention4
4 Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to
25
°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
tD_ret
15
100
years
C
Non-Disclosure Agreement Required
Preliminary — Subject to Change
Because
of
an
order
from
the
United
States
International
Trade
Commission,
BGA-packaged
product
lines
and
part
numbers
indicated
here
currently
are
not
available
from
Freescale
for
import
or
sale
in
the
United
States
prior
to
September
2010:
MC9S08MM128
products
in
81
MAPBGA
packages
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