參數(shù)資料
型號: MCF5275CVM166
廠商: Freescale Semiconductor
文件頁數(shù): 13/44頁
文件大?。?/td> 0K
描述: IC MCU 32BIT 166MHZ 256-MAPBGA
標準包裝: 90
系列: MCF527x
核心處理器: Coldfire V2
芯體尺寸: 32-位
速度: 166MHz
連通性: EBI/EMI,以太網(wǎng),I²C,SPI,UART/USART,USB
外圍設(shè)備: DMA,WDT
輸入/輸出數(shù): 69
程序存儲器類型: ROMless
RAM 容量: 64K x 8
電壓 - 電源 (Vcc/Vdd): 1.4 V ~ 1.6 V
振蕩器型: 外部
工作溫度: -40°C ~ 85°C
封裝/外殼: 256-LBGA
包裝: 散裝
MCF5275 Integrated Microprocessor Family Hardware Specification, Rev. 4
Electrical Characteristics
Freescale Semiconductor
20
8.3
ESD Protection
PINT
= IDD × VDD, Watts - Chip Internal Power
PI/O
= Power Dissipation on Input and Output Pins — User Determined
For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is
neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = PD × (TA + 273 °C) + ΘJMA × PD
2 (3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at
equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1)
and (2) iteratively for any value of TA.
Table 9. ESD Protection Characteristics1, 2
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive
Grade Integrated Circuits.
2
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the
device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Units
ESD Target for Human Body Model
HBM
2000
V
ESD Target for Machine Model
MM
200
V
HBM Circuit Description
Rseries
1500
Ω
C
100
pF
MM Circuit Description
Rseries
0
Ω
C
200
pF
Number of pulses per pin (HBM)
positive pulses
negative pulses
1
Number of pulses per pin (MM)
positive pulses
negative pulses
3
Interval of Pulses
1
sec
PD
KTJ 273°C
+
()
÷
=
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