參數(shù)資料
型號： MCIMX31DVMN5D
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： 32-BIT, 532 MHz, MICROPROCESSOR, PBGA473
封裝： 19 X 19 MM, 0.80 MM PITCH, ROHS COMPLIANT, PLASTIC, MAPBGA-473
文件頁數(shù)： 33/118頁
文件大小： 1083K
代理商： MCIMX31DVMN5D
Electrical Characteristics
MCIMX31/MCIMX31L Technical Data, Rev. 4.3
Freescale Semiconductor
21
The MCIMX31 I/O parameters appear in Table 15 for DDR (Double Data Rate). See Table 8, "Operating
Ranges," on page 13 for temperature and supply voltage ranges.
NOTE
NVCC for Table 15 refers to NVCC2, NVCC21, and NVCC22.
Low-level output current, fast slew rate
IOL_F
VOL=0.2*NVCC
Std Drive
High Drive
Max Drive
4
6
8
——
mA
High-Level DC input voltage
VIH
—
0.7*NVCC
—
NVCC
V
Low-Level DC input voltage
VIL
—0
—
0.3*QVCC
V
Input Hysteresis
VHYS
Hysteresis enabled
0.25
—
V
Schmitt trigger VT+
VT +
Hysteresis enabled
0.5*QVCC
—
V
Schmitt trigger VT–
VT –
Hysteresis enabled
—
0.5*QVCC
V
Pull-up resistor (100 k
Ω PU)
RPU
—
100
—
k
Ω
Pull-down resistor (100 k
Ω PD)
RPD
—
100
—
Input current (no PU/PD)
IIN
VI = NVCC or GND
—
±1
μA
Input current (100 k
Ω PU)
IIN
VI = 0
VI = NVCC
——
25
0.1
μA
Input current (100 k
Ω PD)
IIN
VI = 0
VI = NVCC
——
0.25
28
μA
Tri-state leakage current
IOZ
VI = NVCC or GND
I/O = High Z
——
±2
μA
Table 15. DDR (Double Data Rate) I/O DC Electrical Parameters
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
High-level output voltage
VOH
IOH = –1 mA
NVCC –0.12
—
V
IOH = specified Drive
0.8*NVCC
—
V
Low-level output voltage
VOL
IOL = 1 mA
—
0.08
V
IOL = specified Drive
—
0.2*NVCC
V
High-level output current
IOH
VOH=0.8*NVCC
Std Drive
High Drive
Max Drive
DDR Drive1
–3.6
–7.2
–10.8
–14.4
——
mA
Low-level output current
IOL
VOL=0.2*NVCC
Std Drive
High Drive
Max Drive
DDR Drive1
3.6
7.2
10.8
14.4
——
mA
Table 14. GPIO DC Electrical Parameters (continued)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
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