V
參數(shù)資料
型號: MCP4706A0T-E/MAY
廠商: Microchip Technology
文件頁數(shù): 45/86頁
文件大?。?/td> 0K
描述: IC DAC 8BIT NV EEP I2C 6DFN
標準包裝: 1
設置時間: 6µs
位數(shù): 8
數(shù)據(jù)接口: EEPROM,I²C,串行
轉(zhuǎn)換器數(shù)目: 1
電壓電源: 單電源
功率耗散(最大): 1.1W
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 6-VDFN 裸露焊盤
供應商設備封裝: 6-DFN(2x2)
包裝: 標準包裝
輸出數(shù)目和類型: 1 電壓,單極
采樣率(每秒): *
其它名稱: MCP4706A0T-E/MAYDKR
2011-2012 Microchip Technology Inc.
DS22272C-page 5
MCP4706/4716/4726
Output Amplifier
Minimum Output
Voltage
VOUT(MIN)
0.01
V
Output Amplifier’s minimum drive
Maximum Output
Voltage
VOUT(MAX)
—VDD
0.04
V
Output Amplifier’s maximum drive
Phase Margin
PM
66
Degree
(°)
CL = 400 pF, RL = ∞
Slew Rate
SR
0.55
V/s
Short Circuit Current
ISC
715
24
mA
Settling Time
tSETTLING
—6—
s
Power-Down Output
Disable Time Delay
TPDD
1
s
PD1:PD0 = 00 -> 11, ‘10’, or ‘01’
started from falling edge SCL at end of
ACK bit.
VOUT = VOUT - 10 mV. VOUT not
connected.
Power-Down Output
Enable Time Delay
TPDE
10.5
s
PD1:PD0 = 11, ‘10’, or ‘01’ -> “00”
started from falling edge SCL at end of
ACK bit.
Volatile DAC Register = FFh,
VOUT =10mV. VOUT not connected.
External Reference (VREF) (Note 1)
Input Range
VREF
0.04
VDD -
0.04
V
Buffered mode
0—
VDD
V
Unbuffered mode
Input Impedance
RVREF
210
k
Ω
Unbuffered mode
Input Capacitance
C_REF
29
pF
Unbuffered mode
-3 dB Bandwidth
86.5
kHz
VREF = 2.048V ± 0.1V,
VREF1:VREF0 = 10, G = 0
—67.7—
kHz
VREF = 2.048V ± 0.1V,
VREF1:VREF0 = 10, G = 1
Total Harmonic
Distortion
THD
-73
dB
VREF = 2.048V ± 0.1V,
VREF1:VREF0 = 10, G = 0,
Frequency = 1 kHz
Dynamic Performance (Note 1)
Major Code Transition
Glitch
45
nV-s
1 LSb change around major carry
(800h to 7FFh)
Digital Feedthrough
<10
nV-s
ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, VDD = 2.7V to 5.5V, VSS = 0V, RL = 5 kΩ from VOUT to GND, CL = 100 pF,
TA = -40°C to +125°C. Typical values at +25°C.
Parameters
Symbol
Min
Typical
Max
Units
Conditions
Note
1:
This parameter is ensured by design and is not 100% tested.
2:
This Gain error does not include Offset error. See Section 1.0 “Electrical Characteristics” for more details in plots.
3:
Within 1/2 LSb of final value when code changes from 1/4 to 3/4 of FSR. (Example: 400h to C00h in 12-bit device).
4:
The power-up ramp rate affects on uploading the EEPROM contents to the DAC register. It measures the rise of VDD
over time.
5:
This parameter is ensured by characterization, and not 100% tested.
6:
The PD1:PD0 = 10, and ‘11’ configurations should have the same current.
7:
VDD = VREF = 5.5V.
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