A = +25°C, V<" />
參數(shù)資料
型號: MCP6033T-E/MC
廠商: Microchip Technology
文件頁數(shù): 32/34頁
文件大?。?/td> 0K
描述: IC OPAMP SNGL 1.8V W/CS 8DFN
標(biāo)準(zhǔn)包裝: 3,300
放大器類型: 通用
電路數(shù): 1
輸出類型: 滿擺幅
轉(zhuǎn)換速率: 0.004 V/µs
增益帶寬積: 10kHz
電流 - 輸入偏壓: 1pA
電壓 - 輸入偏移: 150µV
電流 - 電源: 0.9µA
電流 - 輸出 / 通道: 23mA
電壓 - 電源,單路/雙路(±): 1.8 V ~ 5.5 V
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 8-VFDFN 裸露焊盤
供應(yīng)商設(shè)備封裝: 8-DFN(2x3)
包裝: 帶卷 (TR)
其它名稱: MCP6033T-E/MCTR
2008 Microchip Technology Inc.
DS22041B-page 7
MCP6031/2/3/4
Note: Unless otherwise indicated, T
A = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/2, VOUT ≈ VDD/2,
VL = VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low.
FIGURE 2-7:
Input Noise Voltage Density
vs. Frequency.
FIGURE 2-8:
Input Noise Voltage Density
vs. Common Mode Input Voltage.
FIGURE 2-9:
Common Mode Rejection
Ratio, Power Supply Rejection Ratio vs.
Frequency.
FIGURE 2-10:
Common Mode Rejection
Ratio, Power Supply Rejection Ratio vs. Ambient
Temperature.
FIGURE 2-11:
Input Bias, Offset Currents
vs. Ambient Temperature.
FIGURE 2-12:
Input Bias Current vs.
Common Mode Input Voltage.
100
1,000
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
Frequency (Hz)
In
put
Nois
eVol
ta
g
e
D
ensity
(nV
/
Hz
)
0.1
1
10
100
1k
10k
100k
0
25
50
75
100
125
150
175
200
-0
.5
0.
0
0.
5
1.
0
1.
5
2.
0
2.
5
3.
0
3.
5
4.
0
4.
5
5.
0
5.
5
6.
0
Common Mode Input Voltage (V)
In
pu
tNo
is
eV
o
lt
ag
eD
ens
it
y
(nV/
√Hz
)
f = 1 kHz
VDD = 5.5V
0
10
20
30
40
50
60
70
80
90
100
0.1
1
10
100
1000
Frequency (Hz)
CMR
R
,P
S
R
(dB)
PSRR-
PSRR+
CMRR
VDD = 5.5V
60
65
70
75
80
85
90
95
100
105
110
-50
-25
0
25
50
75
100
125
Ambient Temperature (°C)
PSR
R,
C
M
RR
(
d
B)
PSRR (VDD = 1.8V to 5.5V, VCM = VSS)
CMRR (VDD = 1.8V,
VCM = -0.3V to 2.1V)
CMRR (VDD = 5.5V,
VCM = -0.3V to 5.8V)
1
10
100
1000
10000
25
45
65
85
105
125
Ambient Temperature (°C)
Input
B
ia
s
a
nd
O
ff
s
et
C
u
rre
n
ts
(pA
)
VDD = 5.5V
VCM = VDD
Input Bias Current
Input Offset Current
10
100
1000
10000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
Common Mode Input Voltage (V)
Inpu
tB
ia
sC
u
rren
t(p
A)
TA = +125°C
TA = +85°C
VDD = 5.5V
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