2009-2011 Microchip Technology Inc.
DS22229D-page 5
MCP6401/1R/1U/2/4/6/7/9
Output Short-Circuit
Current
ISC
—±5
—
mA
E, H
VDD = 1.8V
—±15
—
mA
E, H
VDD = 6.0V
Power Supply
Supply Voltage
VDD
1.8
—
6.0
V
E, H
Quiescent Current
per Amplifier
IQ
20
45
70
A
E, H
IO = 0, VDD = 5.0V
VCM = 0.2VDD
—
55
—
A
+125°C
E
—
60
—
A
+150°C
H
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, T
A = +25°C, VDD = +1.8v to +6.0v, VSS =GND,
VCM =VDD/2, VOUT ≈ VDD/2, VL =VDDD/2 and RL = 100 kΩ to VL (Refer to Figure 1-1).
Parameters
Sym
Min
Typ
Max
Units
Temp
Parts
(Note 1)
Conditions
Note 1:
E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
2:
Figure 2-14 shows how VCMR changes across temperature.
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A = +25°C, VDD = +1.8 to +6.0V, VSS = GND, VCM =VDD/2,
VOUT ≈ VDD/2, VL =VDD/2, RL = 100 kΩ to VL and CL = 60 pF (Refer to Figure 1-1). Parameters
Sym
Min
Typ
Max
Units
Parts
Conditions
AC Response
Gain Bandwidth Product
GBWP
—
1
—
MHz
E, H
Phase Margin
PM
—
65
—
°
E, H
G = +1 V/V
Slew Rate
SR
—
0.5
—
V/s
E, H
Noise
Input Noise Voltage
Eni
—
3.6
—
Vp-p
E, H
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density
eni
—28
—
nV/
√Hz
E, H
f = 1 kHz
Input Noise Current Density
ini
—0.6
—
fA/
√Hz
E, H
f = 1 kHz
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, V
DD = +1.8V to +6.0V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Temperature Range
TA
-40
—
+125
°C
E temp parts (
TA
-40
—
+150
°C
H temp parts (
Storage Temperature Range
TA
-65
—
+155
°C
Thermal Package Resistances
Thermal Resistance, 5L-SC70
θ
JA
—331
—
°C/W
Thermal Resistance, 5L-SOT-23
θ
JA
—
220.7
—
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
—
149.5
—
°C/W
Thermal Resistance, 8L-2x3 TDFN
θ
JA
—52.5
—
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
—95.3
—
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
—100
—
°C/W
Note 1:
The internal junction temperature (TJ) must not exceed the absolute maximum specification of +155°C.