參數(shù)資料
型號: MCZ33399EF
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: Local Interconnect Network (LIN) Physical Interface
中文描述: 本地互連網(wǎng)絡(luò)(LIN)物理接口
文件頁數(shù): 6/19頁
文件大?。?/td> 234K
代理商: MCZ33399EF
Analog Integrated Circuit Device Data
Freescale Semiconductor
6
33399
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
LIN PIN (VOLTAGE EXPRESSED VERSUS VSUP
VOLTAGE)
Low-Level Bus Voltage (Dominant State)
TXD LOW, V
LIN
= 40 mA
V
DOM
0.0
1.4
V
High-Level Voltage (Recessive State)
TXD HIGH, I
OUT
= 1.0
μ
A
V
REC
0.85 V
SUP
V
Internal
Pullup Resistor to VSUP
(4)
- 40°C
T
A
70°C
70°C < T
A
125°C
R
PU
20
35
30
49
47
60
k
Current Limitation
TXD LOW, V
LIN
= V
SUP
I
LIM
50
150
200
mA
Leakage Current to GND
Recessive State, V
SUP
- 0.3 V
V
LIN
V
SUP
(4)
V
SUP
Disconnected, -18 V
V
LIN
18 V (Excluding Internal Pullup
Source)
V
SUP
Disconnected, V
LIN
= -18 V (Including Internal Pullup Source)
V
SUP
Disconnected, V
LIN
= +18 V (Including Internal Pullup Source)
I
LEAK
0.0
- 40
- 600
15
10
40
μ
A
LIN Receiver, Low-Level Input Voltage
TXD HIGH, RXD LOW
V
LINL
0 V
SUP
0.4 V
SUP
V
LIN Receiver, High-Level Input Voltage
TXD HIGH, RXD HIGH
V
LINH
0.6 V
SUP
V
SUP
V
LIN Receiver Threshold Center
(V
LINH -
V
LINL
) / 2
V
LINTH
V
SUP
/2
V
LIN Receiver Input Voltage Hysteresis
V
LINH -
V
LINL
V
LINHYS
0.05 V
SUP
0.15 V
SUP
V
LIN Wake-Up Threshold Voltage
V
LINWU
3.5
4.5
6.0
V
INH OUTPUT PIN
High-Level Voltage (Normal Mode)
V
WUH
V
SUP
- 0.8
V
SUP
V
Leakage Current (Sleep Mode)
0 < V
INH
< V
SUP
I
LEAK
0
5.0
μ
A
WAKE INPUT
PIN
Typical Wake-Up Threshold (EN = 0 V, 7.0 V
V
SUP
18 V)
(5)
HIGH-to-LOW Transition
LOW-to-HIGH Transition
V
WUTH
0.3 V
SUP
0.4 V
SUP
0.43 V
SUP
0.55 V
SUP
0.55 V
SUP
0.65 V
SUP
V
Wake-Up Threshold Hysteresis
V
WUHYS
0.1 V
SUP
0.16 V
SUP
0.2 V
SUP
V
WAKE Input Current
V
WAKE
14 V
V
WAKE
> 14 V
I
WU
1.0
5.0
100
μ
A
Notes
4.
5.
A diode structure is inserted with the pullup resistor to avoid parasitic current path from LIN to V
SUP
.
When V
SUP
is greater than 18 V, the wake-up voltage
thresholds remain identical to the wake-up thresholds at 18 V.
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 7.0 V
V
SUP
18 V, -40
°
C
T
A
125
°
C, GND = 0 V unless otherwise noted. Typical
values noted reflect the approximate parameter means at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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