參數(shù)資料
型號(hào): MCZ33883EG
廠商: 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述: H-Bridge Gate Driver IC
中文描述: H橋門驅(qū)動(dòng)器集成電路
文件頁(yè)數(shù): 13/21頁(yè)
文件大?。?/td> 323K
代理商: MCZ33883EG
Analog Integrated Circuit Device Data
Freescale Semiconductor
13
33883
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
OPERATIONAL MODES
TURN-ON
For turn-on, the current required to charge the gate source
capacitor C
iss
in the specified time can be calculated as
follows:
I
P
= Q
g
/ t
r
= 80 nC 80 ns
1.0 A
Where Q
g
is power MOSFET gate charge and t
r
is peak
current for rise time.
TURN-OFF
The peak current for turn-off can be obtained in the same
way as for turn-on, with the exception that peak current for fall
time, t
f
, is substituted for t
r
:
I
P
= Q
g
/
= 80 nC 80 ns
1.0 A
In addition to the dynamic current required to turn off or on
the MOSFET, various application-related switching scenarios
must be considered. These scenarios are presented in
Figure 7
. In order to withstand high dV/dt spikes, a low
resistive path between gate and source is implemented
during the OFF-state.
Figure 7. OFF-State Driver Requirement
Driver Requirement:
Low Resistive Gate-
Source Path During
OFF-State
Flyback spike charges low-
side gate via C
rss
charge
current I
rss
up to 2.0 A.
Causes increased uncon-
trolled turn-on of low-side
MOSFET.
C
iss
C
iss
C
rss
C
rss
V
BAT
Driver Requirement:
Low Resistive Gate-
Source Path During
OFF-State. High Peak
Sink Current Capability
Flyback spike pulls down
high-side source V
GS
.
Delays turn-off of high-
side MOSFET.
C
iss
C
iss
C
rss
C
rss
V
BAT
Driver Requirement:
High Peak Sink Current
Capability
Flyback spike charges low-
side gate via C
rss
charge
current I
rss
up to 2.0 A.
Delays turn-off of low-side
MOSFET.
C
iss
C
iss
C
rss
C
rss
V
BAT
Driver Requirement:
Low Resistive Gate-
Source Path During
OFF-State
C
iss
C
iss
C
rss
C
rss
V
BAT
Flyback spike pulls down
high-side source V
GS
.
Causes increased uncon-
trolled turn-on of high-side
OFF
OFF
OFF
OFF
GATE_LS
I
LOAD
L1
I
LOAD
L1
I
LOAD
L1
I
LOAD
L1
I
rss
V
GATE
V
GATE
-V
DRN
GATE_HS
GATE_LS
GATE_HS
GATE_HS
GATE_LS
GATE_HS
GATE_LS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCZ33883EG 制造商:Freescale Semiconductor 功能描述:SEMICONDUCTOR
MCZ33883EGR2 功能描述:功率驅(qū)動(dòng)器IC FULL BRIDGE GATE DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MCZ33884EG 功能描述:多路器開(kāi)關(guān) IC SW DETECT INTERFACE RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開(kāi)關(guān)數(shù)量:4 開(kāi)啟電阻(最大值):7 Ohms 開(kāi)啟時(shí)間(最大值): 關(guān)閉時(shí)間(最大值): 傳播延遲時(shí)間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16
MCZ33884EG 制造商:Freescale Semiconductor 功能描述:SWITCH MONITOR INTERFACE 24SOIC
MCZ33884EGR2 功能描述:多路器開(kāi)關(guān) IC SW DETECT INTERFACE RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開(kāi)關(guān)數(shù)量:4 開(kāi)啟電阻(最大值):7 Ohms 開(kāi)啟時(shí)間(最大值): 關(guān)閉時(shí)間(最大值): 傳播延遲時(shí)間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16