參數(shù)資料
型號(hào): MCZ33883EG
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: H-Bridge Gate Driver IC
中文描述: H橋門驅(qū)動(dòng)器集成電路
文件頁數(shù): 15/21頁
文件大小: 323K
代理商: MCZ33883EG
Analog Integrated Circuit Device Data
Freescale Semiconductor
15
33883
FUNCTIONAL DEVICE OPERATION
OPERATIONAL MODES
C
CP
C
CP
choice depends on power MOSFET characteristics
and the working switching frequency.
Figure 10
contains two
diagrams that depict the influence of C
CP
value on V
CP_OUT
average voltage level. The diagrams represent two different
frequencies for two power MOSFETs, MTP60N06HD and
MPT36N06V.
Figure 10. V
CP_OUT
Versus C
CP
The smaller the C
CP
value is, the smaller the V
CP_OUT
value is. Moreover, for the same C
CP
value, when the
switching frequency increases, the average V
CP_OUT
level
decreases. For most of the applications, a typical value of
33 nF is recommended.
C
CP_OUT
Figure 11
depicts the simplified C
CP_OUT
current and
voltage waveforms. f
PWM
is the working switching frequency.
Figure 11. Simplified C
CP_OUT
Current and Voltage
Waveforms
As shown above, at high-side MOSFET turn-on V
CP_OUT
voltage decreases. This decrease can be calculated
according to the C
CP_OUT
value as follows:
Where Q
g
is power MOSFET gate charge.
C
LR_OUT
C
LR_OUT
provides peak current needed by the low-side
MOSFET turn-on. V
LR_OUT
decrease is as follows:
TYPICAL VALUES OF CAPACITORS
In most working cases the following typical values are
recommended for a well-performing charge pump:
C
CP
= 33 nF, C
CP_OUT
= 470 nF, and C
LR_OUT
= 470 nF
These values give a typical 100 mV voltage ripple on
V
CP_OUT
and V
LR_OUT
with Q
g
= 50 nC.
MTP60N06HD (Q
g
=50nC)
MTP60N06HD (Q
g
= 50 nC)
18.5
19
19.5
20
20.5
21
21.5
5
25
45
C
CP
65
85
Ccp (nF)
20 kHz
100 kHz
18
18.5
19
19.5
20
20.5
21
5
25
45
65
85
Ccp (nF)
C
100 kHz
MTP60N06HD (Q
g
= 50 nC)
MTP36N06V (Q
g
= 40 nC)
V
C
V
C
20 kHz
Cp_out
V
CP_OUT
State
Oscillator
in low
state
f=330kHz
f
PWM
out
Ccp
V
V
CP_OUT
rage V
Cp_out
V
CP_OUT
Oscillator
High Side Turn On
I
CP_OUT
Peak Current
V
CP_OUT
=
C
CP_OUT
Q
g
V
LR_OUT
=
C
LR_OUT
Q
g
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MCZ33883EG 制造商:Freescale Semiconductor 功能描述:SEMICONDUCTOR
MCZ33883EGR2 功能描述:功率驅(qū)動(dòng)器IC FULL BRIDGE GATE DRIVER RoHS:否 制造商:Micrel 產(chǎn)品:MOSFET Gate Drivers 類型:Low Cost High or Low Side MOSFET Driver 上升時(shí)間: 下降時(shí)間: 電源電壓-最大:30 V 電源電壓-最小:2.75 V 電源電流: 最大功率耗散: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube
MCZ33884EG 功能描述:多路器開關(guān) IC SW DETECT INTERFACE RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開關(guān)數(shù)量:4 開啟電阻(最大值):7 Ohms 開啟時(shí)間(最大值): 關(guān)閉時(shí)間(最大值): 傳播延遲時(shí)間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16
MCZ33884EG 制造商:Freescale Semiconductor 功能描述:SWITCH MONITOR INTERFACE 24SOIC
MCZ33884EGR2 功能描述:多路器開關(guān) IC SW DETECT INTERFACE RoHS:否 制造商:Texas Instruments 通道數(shù)量:1 開關(guān)數(shù)量:4 開啟電阻(最大值):7 Ohms 開啟時(shí)間(最大值): 關(guān)閉時(shí)間(最大值): 傳播延遲時(shí)間:0.25 ns 工作電源電壓:2.3 V to 3.6 V 工作電源電流: 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UQFN-16