STATIC ELECTRICAL CHARACTERISTICS POWER OUTPU" />
參數(shù)資料
型號(hào)： MCZ33989EGR2
廠商： Freescale Semiconductor
文件頁數(shù)： 71/72頁
文件大?。?/td> 0K
描述： IC SYSTEM BASIS CHIP CAN 28-SOIC
標(biāo)準(zhǔn)包裝： 1,000
系列： *
應(yīng)用： *
接口： *
電源電壓： *
封裝/外殼： 28-SOIC（0.295"，7.50mm 寬）
供應(yīng)商設(shè)備封裝： 28-SOIC W
包裝： 帶卷 (TR)
安裝類型： 表面貼裝
Analog Integrated Circuit Device Data
8
Freescale Semiconductor
33989
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
POWER OUTPUT (VDD1) IN STOP MODE (16)
VDD1 Output Voltage
IDD1 < = 2.0 mA
VDDSTOP
4.75
5.00
5.25
V
VDD1 Output Voltage
IDD1 < = 10 mA
VDDSTOP2
4.75
5.00
5.25
V
IDD1 Stop Output Current to Wake-up SBC
IDD1SWU
10
17
25
mA
IDD1 Overcurrent to Wake-up Deglitcher Time (17)
IDD1DGLT
40
55
75
s
Reset Threshold
RSTSTOP1
4.5
4.6
4.7
V
Reset Threshold
RSTSTOP2
4.1
4.2
4.3
V
Line Regulation (C at VDD1 = 47 F Tantal)
5.5 V < VSUP < 27 V, IDD = 2.0 mA
LRS
—
5.0
25
mV
Load Regulation (C at VDD1 = 47 F Tantal)
1.0 mA < IDD < 10 mA
LDS
—
15
75
mV
Max Decoupling Capacitor at VDD1 Pin, in Stop Mode(18)
VDDst-cap
—
200
F
TRACKING VOLTAGE REGULATOR (V2) (19)
V2 Output Voltage (C at V2 = 10 F Tantal)
I2 from 2.0 to 200 mA, 5.5 V < VSUP < 27 V
V2
0.99
1.0
1.01
VDD1
I2 Output Current (for information only)
Depending Upon External Ballast Transistor
I2
200
—
mA
V2 Control Drive Current Capability
Worst Case at TJ = 125 °C
12CTRL
0.0
—
10
mA
V2LOW Flag Threshold
V2LTH
3.75
4.0
4.25
V
LOGIC OUTPUT PIN (MISO) (20)
Low Level Output Voltage
IOUT = 1.5 mA
VOL
0.0
—
1.0
V
High Level Output Voltage
IOUT = 250 A
VOH
VDD1-0.9
—
VDD1
V
Tri-Stated MISO Leakage Current
0 V < VMISO < VDD
IHZ
-2.0
—
2.0
A
Notes
16.
If stop mode is used, the capacitor connected at VDD pin should not exceed the maximum specified by the “VDDST-CAP” parameter.
If capacitor value is exceeded, upon entering stop mode, VDD output current may exceed the IDDSWU and prevent the device to stay in
stop mode.
17.
Guaranteed by design; however, it is not production tested.
18.
Guaranteed by design.
19.
V2 specification with external capacitor
- Stability requirement: C > 42 F and ESR < 1.3
(Tantalum capacitor), external resistor between base and emitter required
- Measurement conditions: Ballast transistor MJD32C, C = 10 F Tantalum, 2.2 k resistor between base and emitter of ballast transistor
20.
Push/Pull structure with tri-state condition CS high.
Table 3. Static Electrical Characteristics (continued)
Characteristics noted under conditions 5.5 V
VSUP 18 V, -40 C TA 125 C, GND = 0 V, unless otherwise noted.
Typical values noted reflect the approximate parameter means at TA = 25 °C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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