- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄367624 > MF1S5035DUD (NXP Semiconductors N.V.) MIFARE Classic 1K - Mainstream contactless smart card IC for fast and easy solution development PDF資料下載
參數(shù)資料
| 型號： | MF1S5035DUD |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 外設及接口 |
| 英文描述： | MIFARE Classic 1K - Mainstream contactless smart card IC for fast and easy solution development |
| 封裝： | MF1S5030DA3<SOT500|<<<1<Always Pb-free,;MF1S5030DA4<SOT500-2 (PLLMC)|<<http://www.nxp.com/packages/SOT500-2.html<1<Always Pb-free,;MF1S5030DA6<SOT500-3 (PLLMC)|& |
| 文件頁數(shù)： | 23/37頁 |
| 文件大?。?/td> | 425K |
| 代理商： | MF1S5035DUD |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁
MF1S503x
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.1 — 21 February 2011
194031
23 of 37
NXP Semiconductors
MF1S503x
MIFARE Classic 1K - Mainstream contactless smart card IC
13. Wafer specification
For more details on the wafer delivery forms see
Ref. 6
.
Table 24.
Wafer
diameter
maximum diameter after foil expansion
thickness
flatness
Potential Good Dies per Wafer (PGDW)
Wafer backside
material
treatment
roughness
[1]
the gap between chips may vary due to changing foil expansion
Table 25.
Wafer
diameter
thickness
flatness
Potential Good Dies per Wafer (PGDW)
Wafer backside
material
treatment
roughness
Wafer specifications MF1S5035DUx/L
200 mm typical (8 inches)
210 mm
120
μ
m
±
15
μ
m
not applicable
27720
Si
ground and stress relieve
R
a
max = 0.5
μ
m
R
t
max = 5
μ
m
Chip dimensions
step size
x = 1062
μ
m
y = 1012
μ
m
typical = 27
μ
m
minimum = 5
μ
m
gap between chips
[1]
Passivation
type
material
thickness
sandwich structure
PSG / nitride
500 nm / 600 nm
Wafer specifications MF1S5037DUx
200 mm typical (8 inches)
120
μ
m
±
15
μ
m
not applicable
25060
Si
ground and stress relieve
R
a
max = 0.5
μ
m
R
t
max = 5
μ
m
Chip dimensions
step size
x = 1100
μ
m
y = 1030
μ
m
x = 86,4
μ
m
y = 66,4
μ
m
scribe line
相關PDF資料 |
PDF描述 |
|---|---|
| MF1S5035DUH | MIFARE Classic 1K - Mainstream contactless smart card IC for fast and easy solution development |
| MF1S5037DUA | MIFARE Classic 1K - Mainstream contactless smart card IC for fast and easy solution development |
| MF1S5037DUG | MIFARE Classic 1K - Mainstream contactless smart card IC for fast and easy solution development |
| MF1S7000XDA4 | MIFARE Classic 4K - Mainstream contactless smart card IC for fast and easy solution development |
| MF1S7000XDA8 | MIFARE Classic 4K - Mainstream contactless smart card IC for fast and easy solution development |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MF1S5037DUA,005 | 功能描述:RFID應答器 MIFARE CLASSIC 1K CONTACTLESS SMART IC RoHS:否 制造商:Murata 存儲容量:512 bit 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| MF1S5037DUG,005 | 功能描述:RFID應答器 MIFARE CLASSIC 1K CONTACTLESS SMART IC RoHS:否 制造商:Murata 存儲容量:512 bit 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| MF1S6802JA | 制造商:IRCTT 制造商全稱:IRC - a TT electronics Company. 功能描述:Power Metal Film Resistor |
| MF1S6802JR | 制造商:IRCTT 制造商全稱:IRC - a TT electronics Company. 功能描述:Power Metal Film Resistor |
| MF1S6802KA | 制造商:IRCTT 制造商全稱:IRC - a TT electronics Company. 功能描述:Power Metal Film Resistor |
發(fā)布緊急采購，3分鐘左右您將得到回復。