110
2535J–AVR–08/10
ATtiny13
6. Wait until Vcc actually reaches 4.5 - 5.5V before giving any serialinstructions on
SDI/SII.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
17.7.2
High-Voltage Serial Programming Instruction set
Table 17-12. High-voltage Reset Characteristics
Supply Voltage
RESET Pin High-voltage Threshold
Minimum High-voltage Period for
Latching Prog_enable
VCC
VHVRST
tHVRST
4.5V
12V
100 ns
5.5V
12
100 ns
Table 17-13. High-Voltage Serial Programming Instruction Set for ATtiny13
Instruction
Instruction Format
Operation Remarks
Instr.1/5
Instr.2/6
Instr.3
Instr.4
Chip Erase
SDI
SII
SDO
0_1000_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_0100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
x_xxxx_xxxx_xx
Wait after Instr.3 until SDO goes
high for the Chip Erase cycle to
finish.
Load “Write
Flash”
Command
SDI
SII
SDO
0_0001_0000_00
0_0100_1100_00
x_xxxx_xxxx_xx
Enter Flash Programming code.
Load Flash
Page Buffer
SDI
SII
SDO
0_ bbbb_bbbb _00
0_0000_1100_00
x_xxxx_xxxx_xx
0_eeee_eeee_00
0_0010_1100_00
x_xxxx_xxxx_xx
0_dddd_dddd_00
0_0011_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1101_00
x_xxxx_xxxx_xx
Repeat after Instr. 1 - 5 until the
entire page buffer is filled or until all
data within the page is filled. See
Note 1.
SDI
SII
SDO
0_0000_0000_00
0_0111_1100_00
x_xxxx_xxxx_xx
Instr 5.
Load Flash High
Address and
Program Page
SDI
SII
SDO
0_0000_000a_00
0_0001_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_0100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
x_xxxx_xxxx_xx
Wait after Instr 3 until SDO goes
high. Repeat Instr. 2 - 3 for each
loaded Flash Page until the entire
Flash or all data is programmed.
Repeat Instr. 1 for a new 256 byte
page. See Note 1.
Load “Read
Flash”
Command
SDI
SII
SDO
0_0000_0010_00
0_0100_1100_00
x_xxxx_xxxx_xx
Enter Flash Read mode.
Read Flash Low
and High Bytes
SDI
SII
SDO
0_bbbb_bbbb_00
0_0000_1100_00
x_xxxx_xxxx_xx
0_0000_000a_00
0_0001_1100_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1000_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0110_1100_00
q_qqqq_qqqx_xx
Repeat Instr. 1, 3 - 6 for each new
address. Repeat Instr. 2 for a new
256 byte page.
SDI
SII
SDO
0_0000_0000_00
0_0111_1000_00
x_xxxx_xxxx_xx
0_0000_0000_00
0_0111_1100_00
p_pppp_pppx_xx
Instr 5 - 6.
Load “Write
EEPROM”
Command
SDI
SII
SDO
0_0001_0001_00
0_0100_1100_00
x_xxxx_xxxx_xx
Enter EEPROM Programming
mode.