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參數(shù)資料
| 型號(hào)： | MGF0918A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | L & S BAND GaAs FET [ SMD non - matched ] |
| 中文描述： | 蜇 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 86K |
| 代理商： | MGF0918A |
Mitsubishi Electric July 1999
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0918A
L & S BAND GaAs FET
[ SMD non
–
matched ]
DESCRIPTION
The MGF0918A GaAs FET with an N-channel schottky
Gate, is designed for use UHF band amplifiers.
FEATURES
·
High output power
Po=27dBm(TYP.) @f=1.9GHz,Pin=8dBm
·
High power gain
Gp=20dB(TYP.) @f=1.9GHz
·
High power added efficiency
h
add=45%(TYP.) @f=1.9GHz,Pin=8dBm
·
Hermetic Package
APPLICATION
·
For UHF Band power amplifiers
QUALITY
·
GG
RECOMMENDED BIAS CONDITIONS
·
Vds=10V
·
Ids=150mA
·
Rg=1k
W
Delivery
Tape & Reel
Absolute maximum ratings
(Ta=25
°
C)
Symbol
Parameter
Ratings
Unit
V
GSO
Gate to sourcebreakdown voltage
-15
V
V
GDO
Gate to drain breakdown voltage
-15
V
I
D
Drain current
400
mA
I
GR
Reverse gate current
-1.2
mA
I
GF
Forward gate current
5.0
mA
P
T
Total power dissipation
3
W
Tch
Cannel temperature
175
°
C
Tstg
Storage temperature
-65 to +175
°
C
Electrical characteristics
(Ta=25
°
C)
Symbol
Parameter
Test conditions
Limits
Unit
Min.
Typ.
Max.
I
DSS
Saturated drain current
V
DS
=3V,V
GS
=0V
-
300
400
mA
V
GS(off)
gm
Gate to source cut-off voltage
V
DS
=3V,I
D
=1.0mA
-1.0
-
-5.0
V
Transconductance
V
DS
=3V,I
D
=150mA
-
130
-
mS
Po
Output power
V
DS
=10V,I
D
=150mA,f=1.9GHz
25
27
-
dBm
h
add
Power added Efficiency
Pin=8dBm
-
45
-
%
G
LP
Linear Power Gain
V
DS
=10V,I
D
=150mA,f=1.9GHz
-
20
-
dB
NF
Noise figure
-
1.0
-
dB
Rth(ch-c)
Thermal Resistance *1
D
Vf Method
-
35
50
°
C/W
*1:
Channel to case / Above parameters, ratings, limits are subject to change.
Fig.1
Preliminary
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