型號 廠商 描述
mg600q1us61
2 3 4 5 6 7 8		 Toshiba Corporation TOSHIBA IGBT Module Silicon N Channel IGBT
mg600q1us41
2 3 4 5 6 7 8		 Toshiba Corporation Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
mg600q2ys60a
2 3 4 5 6 7 8		 Toshiba Corporation HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
mg600
2 3 4 5 6		 Toshiba Corporation N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
mg600j1us51
2 3 4 5 6		 Toshiba Corporation N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
mg75j2ys50
2 3 4 5		 Toshiba Corporation Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管)
mg75j6es50
2 3 4 5 6		 Toshiba Corporation N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
mg75q2ys50
2 3 4 5 6		 Toshiba Corporation Silicon N channel IGBT(N溝道絕緣柵雙極型晶體管)
mg75q2ys51
2 3 4 5 6		 Toshiba Corporation 24-Port Wireless Switch; Approval Categories:UL, EN & IEC: 60950-I; EMC FCC Part 15 Class B, EN 300386; Data Rate:54Mbps; External Depth:15.5"; External Height:1.7"; External Width:17.3" RoHS Compliant: Yes
mg75q2yk1
2 3 4 5 6		 Electronic Theatre Controls, Inc. TRANSISTOR MODULES
mg75q2yl1
2 3 4 5 6		 Electronic Theatre Controls, Inc. TRANSISTOR MODULES
mg75q2ys52
2 3 4 5 6		 Toshiba Corporation CABLE, EFGLAS, 22AWG, WHITE, 100M; Area, conductor CSA:0.336mm2; Conductor make-up:19/0.15mm; Voltage rating, AC:600V; Current rating:9A; Colour, primary insulation:White; Material, primary insulation:PTFE; Diameter, External:2.05mm; RoHS Compliant: Yes
mg75q2ys40
2 3 4 5 6		 Toshiba Corporation WIRE, ETFE, TEFZEL, 12AWG, WHITE, 100M; Area, conductor CSA:3.022mm2; Conductor make-up:37/0.320; Voltage rating, AC:600V; Current rating:35A; Colour, primary insulation:White; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes
mg75q2ys42
2 3 4 5 6		 Toshiba Corporation WIRE, PTFE, B, BLACK, 19/0.2MM, 100M; Area, conductor CSA:0.597mm2; Conductor make-up:19/0.2; Voltage rating, AC:600V; Current rating:11A; Colour, primary insulation:Black; Material, primary insulation:PTFE; Diameter, External:1.6mm; RoHS Compliant: Yes
mg800j2ys50a
2 3 4 5 6 7		 Toshiba Corporation TOSHIBA IGBT Module Silicon N Channel IGBT
mg90v2ys40
2 3 4 5		 Toshiba Corporation WIRE, ETFE, TEFZEL, 14AWG, WHITE, 100M; Area, conductor CSA:1.675mm2; Conductor make-up:37/0.250; Voltage rating, AC:600V; Current rating:23A; Colour, primary insulation:White; Material, primary insulation:Tefzel; Diameter, RoHS Compliant: Yes
mgf0904
2 3		 Mitsubishi Electric Corporation L,S BAND POWER GaAs FET
mgf0904a
2 3		 Mitsubishi Electric Corporation L,S BAND POWER GaAs FET
mgf0905
2 3		 Mitsubishi Electric Corporation MINIATURE POWER RELAY
mgf0905a
2 3		 Mitsubishi Electric Corporation L,S BAND POWER GaAs FET
mgf0906
2 3		 Mitsubishi Electric Corporation L,S BAND POWER GaAs FET
mgf0906b
2 3		 Mitsubishi Electric Corporation L,S BAND POWER GaAs FET
mgf0907
2 3		 Mitsubishi Electric Corporation L,S BAND POWER GaAs FET
mgf0907b
2 3		 Mitsubishi Electric Corporation L,S BAND POWER GaAs FET
mgf0909
2 3		 Mitsubishi Electric Corporation L,S BAND POWER GaAs FET
mgf0909a
2 3		 Mitsubishi Electric Corporation L,S BAND POWER GaAs FET
mgf0910a
2 3		 Mitsubishi Electric Corporation L, S BAND POWER GaAs FET
mgf0911a
2 3		 Mitsubishi Electric Corporation L, S BAND POWER GaAs FET
mgf0913a
2 3 4		 Mitsubishi Electric Corporation L & S BAND GaAs FET [ SMD non - matched ]
mgf0915a
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Mitsubishi Electric Corporation L & S BAND GaAs FET[ SMD non - matched ]
mgf0918a
2 3		 Mitsubishi Electric Corporation L & S BAND GaAs FET [ SMD non - matched ]
mgf0919a
2 3 4		 Mitsubishi Electric Corporation L & S BAND GaAs FET [ SMD non matched ]
mgf0952p
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18		 Mitsubishi Electric Corporation L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ]
mgf1302
2 3 4		 Mitsubishi Electric Corporation LOW NOISE GaAs FET
mgf1303
2 3 4		 Mitsubishi Electric Corporation LOW NOISE GaAs FET
mgf1303b
2 3 4		 Mitsubishi Electric Corporation LOW NOISE GaAs FET
mgf1304a
2 3 4		 Mitsubishi Electric Corporation FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
mgf1305
2 3 4		 Mitsubishi Electric Corporation FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
mgf1403b
2 3 4		 Mitsubishi Electric Corporation LOW NOISE GaAs FET
mgf1423b
2 3 4 5		 Mitsubishi Electric Corporation SMALL SIGNAL GaAs FET
mgf1801
2 3		 Mitsubishi Electric Corporation MICROWAVE POWER GaAs FET
mgf1801b
2 3		 Mitsubishi Electric Corporation MICROWAVE POWER GaAs FET
mgf1801bt
2 3		 Mitsubishi Electric Corporation TAPE CARRIER MICROWAVE POWER GaAs FET
mgf1908a
2 3 4 5		 Mitsubishi Electric Corporation TAPE CARRIER LOW NOISE GaAs FET
mgf2407
2		 Mitsubishi Electric Corporation MICROWAVE POWER GaAs FET
mgf4316
2 3		 Mitsubishi Electric Corporation Super Low Noise InGaAs HEMT
mgf4319
2 3		 Mitsubishi Electric Corporation Super Low Noise InGaAs HEMT
mgf4714cp
2 3		 Mitsubishi Electric Corporation PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT
mgf491xg
2 3		 Mitsubishi Electric Corporation SUPER LOW NOISE InGaAs HEMT
mgf4916
2 3		 Mitsubishi Electric Corporation CONTACT