參數(shù)資料
型號: MGFC39V3436
廠商: Mitsubishi Electric Corporation
英文描述: 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
中文描述: 3.4 - 3.6GHz的頻段8瓦特內(nèi)部匹配砷化鎵場效應(yīng)管
文件頁數(shù): 2/2頁
文件大?。?/td> 99K
代理商: MGFC39V3436
相關(guān)PDF資料
PDF描述
MGFC40V3742A Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1500uF; Voltage: 6.3V; Case Size: 10x12.5 mm; Packaging: Bulk
MGFC40V4450A 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V7177A 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V7177B 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
MGFC40V7177 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGFC39V3436_04 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET
MGFC39V3436_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET
MGFC39V3742A 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET
MGFC39V3742A_04 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET
MGFC39V3742A_11 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET