型號: | MGFC39V3436 |
廠商: | Mitsubishi Electric Corporation |
英文描述: | 3.4 - 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET |
中文描述: | 3.4 - 3.6GHz的頻段8瓦特內(nèi)部匹配砷化鎵場效應(yīng)管 |
文件頁數(shù): | 2/2頁 |
文件大?。?/td> | 99K |
代理商: | MGFC39V3436 |
相關(guān)PDF資料 |
PDF描述 |
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MGFC40V3742A | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 1500uF; Voltage: 6.3V; Case Size: 10x12.5 mm; Packaging: Bulk |
MGFC40V4450A | 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V7177A | 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V7177B | 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
MGFC40V7177 | 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MGFC39V3436_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET |
MGFC39V3436_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
MGFC39V3742A | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |
MGFC39V3742A_04 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:3.7 ~ 4.2GHz BAND 8W INTERNALLY MATCHED GaAs FET |
MGFC39V3742A_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:C band internally matched power GaAs FET |