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參數(shù)資料
| 型號： | MGFC45V6472A |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET |
| 中文描述： | 6.4 - 7.2GHz頻段32W內(nèi)部匹配砷化鎵場效應(yīng)管 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 41K |
| 代理商： | MGFC45V6472A |
27-March'98
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC45V6472A
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS (Ta=25deg.C)
S PARAMETERS
(Ta=25deg.C,VDS=10V,ID=8.0A)
S Parameters (TYP.)
f
S11
S21
S12
S22
(GHz)
6.4
6.5
6.6
6.7
6.8
6.9
7.0
7.1
7.2
Magn.
0.66
0.61
0.56
0.50
0.43
0.35
0.24
0.15
0.01
Angle(deg.)
100
84
70
57
42
27
12
1
-10
Magn.
2.39
2.43
2.47
2.54
2.59
2.66
2.73
2.75
2.72
Angle(deg.)
-106
-122
-138
-154
-170
173
155
143
123
Magn.
0.057
0.065
0.071
0.079
0.088
0.095
0.101
0.105
0.109
Angle(deg.)
-171
174
160
145
131
116
100
88
70
Magn.
0.32
0.34
0.35
0.35
0.34
0.31
0.27
0.24
0.20
Angle(deg.)
74
64
52
40
27
12
-8
-27
-61
MITSUBISHI
ELECTRIC
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
P1dB ,GLP vs. f
42
43
44
45
46
47
6.3
6.4
6.5
6.6
6.7
6.8 6.9
7.0
7.1
7.2
7.3
FREQUENCY f(GHz)
O
7
8
9
10
11
12
L
P1dB
GLP
VDS=10(V)
IDS=8(A)
Po , PAE vs. Pin
25
30
35
40
45
50
20
25
30
35
40
45
INPUTPOWER Pin(dBm)
O
0
10
20
30
40
50
P
VDS=10(V)
IDS=8(A)
f=6.8(GHz)
Po
PAE
Po,IM3 vs.Pin
16
20
24
28
32
36
40
44
18
20
22
24
26
28
30
32
34
36
INPUT POWER Pin (dBm S.C.L.)
O
-70
-60
-50
-40
-30
-20
-10
0
I
VDS=10(V)
IDS=8(A)
f=7.2(GHz)
Delta f=10(MHz)
Po
IM3
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