型號(hào): | MGFK35V4045 |
廠商: | Mitsubishi Electric Corporation |
英文描述: | Aluminum Electrolytic Radial Lead Low Impedance Capacitor; Capacitance: 470uF; Voltage: 10V; Case Size: 8x11.5 mm; Packaging: Bulk |
中文描述: | 14.0頻率在14.5GHz頻段3W內(nèi)部匹配砷化鎵場(chǎng)效應(yīng)管 |
文件頁(yè)數(shù): | 1/2頁(yè) |
文件大小: | 96K |
代理商: | MGFK35V4045 |
相關(guān)PDF資料 |
PDF描述 |
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MGFK37V4045 | DIODE ZENER TRIPLE ISOLATED 200mW 3.6Vz 5mA-Izt 0.0556 5uA-Ir 1 SOT-363 3K/REEL |
MGFK38A3745 | 13.75-14.50GHz BAND 6W INTERNALLY MATCHED GaAs FET |
MGFK38V2228 | RECTIFIER BRIDGE 35A 1000V 400A-ifsm 1.1V-vf 5uA-ir GBPCW 100/TRAY |
MGFK38V2732 | RECTIFIER BRIDGE 10A 50V 220A-ifsm 1V-vf 5uA-ir GBU 20/BOX |
MGFL45V1920A | 1.9-2.0GHz BAND 32W INTERNALLY MATCHD GaAs FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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MGFK35V4045_03 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 3W INTERNALLY MATCHED GaAs FET |
MGFK35V4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:X/Ku band internally matched power GaAs FET |
MGFK36V4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET |
MGFK37V4045 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:14.0-14.5GHz BAND 5W INTERNALLY MATCHED GaAs FET |
MGFK37V4045_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:X/Ku band internally matched power GaAs FET |