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參數(shù)資料
| 型號(hào)： | MGP7N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 122K |
| 代理商： | MGP7N60E |
3
Motorola IGBT Device Data
Figure 1. Output Characteristics
Figure 2. Output Characteristics
Figure 3. Transfer Characteristics
Figure 4. VCE versus Junction Temperature
Figure 5. Capacitance Variation
Figure 6. VGE versus Total Charge
8
0
VCE(on), COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
15
20
10
10
12
5
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
12
8
6
4
2
0
TJ, JUNCTION TEMPERATURE (
°
C)
–25
–50
2.2
1.8
1.6
1.4
1.2
1.0
0
11
10
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1200
800
600
400
200
0
Qg, TOTAL GATE CHARGE (nC)
5
30
0
20
16
12
4
0
5
I
V
5
0
3
1
2
4
5
6
7
6
7
8
9
25
50
75
100
125
150
C
15
25
20
1000
10
15
35
20
25
8
V
8
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
15
20
10
I
5
0
3
1
2
4
5
6
7
I
13
10
2.0
,
G
TJ = 25
°
C
IC = 5.0 A
Q1
Q2
QT
VGE = 0 V
TJ = 25
°
C
Cies
Coes
Cres
TJ = 25
°
C
VGE = 10 V
12.5 V
15 V
17.5 V
20 V
TJ = 125
°
C
VGE = 10 V
12.5 V
15 V
17.5 V
20 V
IC = 5.0 A
3.75 A
2.5 A
TJ = 125
°
C
25
°
C
V
VCE = 100 V
5 S PULSE WIDTH
VGE = 15 V
80 S PULSE WIDTH
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