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參數(shù)資料
| 型號(hào)： | MGP7N60E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Insulated Gate Bipolar Transistor |
| 中文描述： | 10 A, 600 V, N-CHANNEL IGBT, TO-220AB |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 122K |
| 代理商： | MGP7N60E |
4
Motorola IGBT Device Data
Figure 7. Turn–Off Losses versus Gate
Resistance
Figure 8. Turn–Off Losses versus Junction
Temperature
Figure 9. Turn–Off Energy Losses versus
Collector Current
Figure 10. Reverse Biased Safe Operating
Area
50
10
GATE RESISTANCE ( )
0.4
0.5
0.3
5
7
0
IC, COLLECTOR CURRENT (AMPS)
0.6
0.4
0.3
0.2
0.1
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1
100
10
1
6
I
0.1
0
25
15
20
30
35
40
45
1
2
3
4
10
100
1000
150
0
TJ, JUNCTION TEMPERATURE (
°
C)
0.3
0.5
0.2
0.1
0
50
25
75
100
125
,
E
8
0.5
0.2
0.4
VCC = 360 V
VGE = 15 V
TJ = 125
°
C
IC = 5.0 A
3.75 A
2.5 A
VCC = 360 V
VGE = 15 V
RG = 20
IC = 5.0 A
3.75 A
2.5 A
VGE = 15 V
RGE = 20
TJ = 125
°
C
VCC = 360 V
VGE = 15 V
RG = 20
TJ = 125
°
C
,
E
,
E
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