參數(shù)資料
型號(hào): MGS13002D
廠商: MOTOROLA INC
元件分類(lèi): IGBT 晶體管
英文描述: Insulated Gate Bipolar Transistor
中文描述: 0.5 A, 600 V, N-CHANNEL IGBT, TO-226AE
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 135K
代理商: MGS13002D
4
Motorola Power Products Division Technical Data
Figure 7. Capacitance Variation
Figure 8. Gate–To–Emitter Voltage versus
Total Charge
Figure 9. Total Switching Losses versus
Collector–To–Emitter Current
Figure 10. Total Switching Losses versus
Case Temperature
Figure 11. Minimum Turn–Off
Safe Operating Area
20
25
0
COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
150
100
50
QG, TOTAL GATE CHARGE (nC)
6.0
0
10
5.0
0
2.0
0
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
60
40
30
20
10
0
TC, CASE TEMPERATURE (
°
C)
50
25
20
15
10
5.0
0
1.5
100
300
0
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
2.5
2.0
1.5
1.0
0.5
0
200
C
V
,
E
0
10
5.0
15
7.0
1.0
2.0
3.0
4.0
5.0
15
0.5
1.0
75
100
150
,
I
400
600
500
,
G
50
125
,
E
VCE = 300 V
VGE = 15 V
IC = 0.3 A
TC = 25
°
C
TC = 25
°
C
Cies
Coes
Cres
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25
dV/dt = 1.0 kV/ s
125
°
C
25
°
C
L = 3.0 mH
VCC = 300 V
VGE = 15 V
RG = 25
dV/dt = 1.0 kV/ s
0.7 A
0.3 A
TC = 125
°
C
VGE = 15 V
RG = 25
L = 3.0 mH
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