參數(shù)資料
型號: MGS13002D
廠商: MOTOROLA INC
元件分類: IGBT 晶體管
英文描述: Insulated Gate Bipolar Transistor
中文描述: 0.5 A, 600 V, N-CHANNEL IGBT, TO-226AE
文件頁數(shù): 5/6頁
文件大?。?/td> 135K
代理商: MGS13002D
5
Motorola Power Products Division Technical Data
t, TIME (ms)
r
R
1.0
0.1
0.01
D = 0.5
SINGLE PULSE
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
0.2
0.1
0.05
0.02
0.01
1.0E+02
1.0E+03
0.001
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 25
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 12. Typical Thermal Response
(RJC(t))
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