參數(shù)資料
型號： MGSF1N02LT3
廠商： MOTOROLA INC
元件分類： 小信號晶體管
英文描述： N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
中文描述： 750 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁數(shù)： 3/6頁
文件大?。?/td> 187K
代理商： MGSF1N02LT3
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
R
(
R
Figure 3. On–Resistance versus Drain Current
0
0.2
0.4
0.6
0.8
0.04
0.1
0.12
Figure 4. On–Resistance versus Drain Current
ID, DRAIN CURRENT (AMPS)
Figure 5. On–Resistance Variation with Temperature
0.6
1
0.001
0.1
1
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 6. Gate Charge
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
I
25
°
C
VGS = 4.5 V
VGS = 10 V
ID = 2 A
–55
–5
45
95
145
TJ = 150
°
C
0.08
0.7
0.8
0.9
0
0.2
0.4
0.6
0.06
0.01
–55
°
C
25
°
C
0.8
Figure 8. Capacitance
R
0
0.4
0.8
1.2
1.6
0.04
0.1
0.12
ID, DRAIN CURRENT (AMPS)
VGS = 10 V
0.08
0.06
V
0
10
6
2
0
QT, TOTAL GATE CHARGE (pC)
8
4
1000
6000
VDS = 16 V
TJ = 25
°
C
2000
ID = 2.0 A
3000
VDS, DRAIN–TO–SOURCE VOLTAGE (Volts)
C
0
15
20
5
10
Ciss
Coss
Crss
1000
100
VGS = 0 V
f = 1 MHz
TJ = 25
°
C
10
0.1
0.3
0.5
0.7
150
°
C
–55
°
C
0.14
0.09
0.11
0.07
0.05
0.13
0.2
0.6
1
1.4
1.1
1.5
1.2
1.3
1.4
VGS = 4.5 V
ID = 1 A
5000
4000
1
0.9
1
0.18
0.2
0.16
0.14
1.8
2
25
°
C
150
°
C
–55
°
C
1.6
相關(guān)PDF資料
PDF描述
MGSF1N03LT1 CHOKE, POWER, SHIELDED, 47UH; Inductor type:Shielded Power Choke; Inductance:47uH; Tolerance, inductance:30%; Resistance:250mR; Frequency, resonant:10MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
MGSF1N03LT1 Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
MGSF1N03LT3 Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
MGSF1N03LT3G Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23
MGSF1N03LT3 CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance:+/-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGSF1N02LT3G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts N-Channel SOT-23
MGSF1N03L 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:Power MOSFET 30 V, 2.1 A, Single Na??Channel, SOTa??23
MGSF1N03LT1 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MGSF1N03LT1G 功能描述:MOSFET 30V 2.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
MGSF1N03LT1G-CUT TAPE 制造商:ON 功能描述:MGSF Series N-Channel 30 V 80 mOhm 0.73 W Surface Mount Power MOSFET - SOT-23
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