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參數(shù)資料
| 型號(hào)： | MGSF1N03LT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 30 V, 2.1 A, Single N−Channel, SOT−23 |
| 中文描述： | 1600 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封裝： | MINIATURE, CASE 318-08, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 183K |
| 代理商： | MGSF1N03LT3G |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
$ !
"
# !""# !"
Part of the GreenLine
Portfolio of devices with energy–
conserving traits.
These miniature surface mount MOSFETs utilize Motorola’s
High Cell Density, HDTMOS process. Low rDS(on) assures
minimal power loss and conserves energy, making this device
ideal for use in space sensitive power management circuitry.
Typical applications are dc–dc converters and power manage-
ment in portable and battery–powered products such as
computers, printers, PCMCIA cards, cellular and cordless
telephones.
Low rDS(on) Provides Higher Efficiency and Extends Battery
Life
Miniature SOT–23 Surface Mount Package Saves Board
Space
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VGS
ID
IDM
30
Vdc
Gate–to–Source Voltage — Continuous
±
20
Vdc
Drain Current — Continuous @ TA = 25
°
C
Drain Current
— Pulsed Drain Current (tp
≤
10
μ
s)
750
2000
mA
Total Power Dissipation @ TA = 25
°
C
Operating and Storage Temperature Range
PD
225
mW
TJ, Tstg
R
θ
JA
TL
– 55 to 150
°
C
Thermal Resistance — Junction–to–Ambient
625
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MGSF1N03LT1
7
″
8mm embossed tape
3000
MGSF1N03LT3
13
″
8mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MGSF1N03LT1/D
SEMICONDUCTOR TECHNICAL DATA
CASE 318–08, Style 21
SOT–23 (TO–236AB)
N–CHANNEL
ENHANCEMENT–MODE
TMOS MOSFET
Motorola Preferred Device
1
2
3
3 DRAIN
1
GATE
2 SOURCE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MGSF1N03LT3 | CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance:+/-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes |
| MGSF1P02LT1 | P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET |
| MGSF1P02ELT1 | Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02ELT3 | Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02LT3 | Power MOSFET 750 mAmps, 20 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MGSF1P02 | 制造商:WEITRON 制造商全稱:Weitron Technology 功能描述:Power MOSFET P-Channel |
| MGSF1P02ELT1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02ELT3 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 750 mAmps, 20 Volts P?Channel SOT?23 |
| MGSF1P02LT1 | 功能描述:MOSFET P-CH 20V 750MA SOT-23 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| MGSF1P02LT3 | 制造商:ON Semiconductor 功能描述:Trans MOSFET P-CH 20V 0.75A 3-Pin SOT-23 T/R |
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