參數(shù)資料
型號(hào)： MGW12N120
廠商： MOTOROLA INC
元件分類： IGBT 晶體管
英文描述： Insulated Gate Bipolar Transistor
中文描述： 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
文件頁數(shù)： 1/6頁
文件大?。?/td> 228K
代理商： MGW12N120
1
Motorola, Inc. 1996
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Short circuit rated IGBT’s are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operation at high frequencies.
Industry Standard High Power TO–247 Package with
Isolated Mounting Hole
High Speed Eoff: 160 J/A typical at 125
°
C
High Short Circuit Capability – 10 s minimum
Robust High Voltage Termination
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCES
VCGR
VGE
IC25
IC90
ICM
1200
Vdc
Collector–Gate Voltage (RGE = 1.0 M
)
Gate–Emitter Voltage — Continuous
1200
Vdc
±
20
Vdc
Collector Current — Continuous @ TC = 25
°
C
Collector Current
— Continuous @ TC = 90
°
C
Collector Current
— Repetitive Pulsed Current (1)
20
12
40
Adc
Apk
Total Power Dissipation @ TC = 25
°
C
Derate above 25
°
C
PD
123
0.98
Watts
W/
°
C
Operating and Storage Junction Temperature Range
TJ, Tstg
tsc
–55 to 150
°
C
Short Circuit Withstand Time
(VCC = 720 Vdc, VGE = 15 Vdc, TJ = 125
°
C, RG = 20
)
10
s
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
1.0
45
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 5 seconds
TL
260
°
C
Mounting Torque, 6–32 or M3 screw
10 lbf in (1.13 N m)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 1
Order this document
by MGW12N120/D
SEMICONDUCTOR TECHNICAL DATA
IGBT IN TO–247
12 A @ 90
°
C
20 A @ 25
°
C
1200 VOLTS
SHORT CIRCUIT RATED
CASE 340F–03, Style 4
TO–247AE
Motorola Preferred Device
G
C
E
C
E
G
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MGW12N120D 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Motorola Inc 功能描述: 制造商:ON Semiconductor 功能描述: 制造商:MOTOROLA 功能描述:
MGW14N60ED 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ONS 功能描述:ON SEMICONDUCTOR NXC5D 制造商:ON Semiconductor 功能描述:
MGW151205 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;5V@1.5A,-5@1.5A;9-18V In;Encapsulated;Thru Hole;MG Series 制造商:Cosel Usa Inc 功能描述:Single Output 15 W 12 V Input 5 V Output Isolated DC/DC Power Supply 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 5V/-5V/10V 1.5A 15W 6-Pin
MGW151205-R 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 5V/-5V/10V 1.5A 15W 6-Pin
MGW151212 制造商:Cosel Usa Inc 功能描述:Power Supply;DC-DC;12V@0.65A,-12@0.65A;9-18V In;Encapsulated;Thru Hole;MG Series 制造商:Cosel Usa Inc 功能描述:MG Series 15.6 W Dual Output 12 or 24 V Isolated DC/DC Power Supply 制造商:Cosel Usa Inc 功能描述:Module DC-DC 2-OUT 12V/-12V/24V 0.65A 15.6W 6-Pin
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