參數(shù)資料
型號(hào): MGW12N120
廠商: MOTOROLA INC
元件分類: IGBT 晶體管
英文描述: Insulated Gate Bipolar Transistor
中文描述: 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
文件頁(yè)數(shù): 4/6頁(yè)
文件大?。?/td> 228K
代理商: MGW12N120
4
Motorola TMOS Power MOSFET Transistor Device Data
TJ = 25
°
C
Figure 7. Total Switching Losses versus
Gate Resistance
RG, GATE RESISTANCE (OHMS)
T
3
1
50
30
20
10
40
Figure 8. Total Switching Losses versus
Case Temperature
2.5
2
VCC = 720 V
VGE = 15 V
TJ = 125
°
C
IC = 10 A
TC, CASE TEMPERATURE (
°
C)
T
2.6
2.4
0.2
150
75
25
0
100
1.8
1.6
1
VCC = 720 V
VGE = 15 V
RG = 20
50
125
Figure 9. Total Switching Losses versus
Collector–to–Emitter Current
IC, COLLECTOR–TO–EMITTER CURRENT (AMPS)
T
2.4
1.8
1
10
9
7
5
2
1.6
VCC = 720 V
VGE = 15 V
RG = 20
TJ = 125
°
C
1.2
8
Figure 10. Maximum Forward Drop versus
Instantaneous Forward Current
VFM, FORWARD VOLTAGE DROP (VOLTS)
I
F
25
15
0
4
3
1
0
2
IC = 10 A
1.5
1.4
20
7.5 A
5 A
7.5 A
5 A
3
2.2
1.4
1.2
0.6
0.4
2.8
2
0.8
6
2.2
10
5
TJ = 125
°
C
I
Figure 11. Reverse Biased
Safe Operating Area
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
100
10
0.1
1000
1
1
100
10
VGE = 15 V
RGE = 20
TJ
125
°
C
10000
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