參數(shù)資料
型號： MGW20N120
廠商： MOTOROLA INC
元件分類： IGBT 晶體管
英文描述： Insulated Gate Bipolar Transistor
中文描述： 28 A, 1200 V, N-CHANNEL IGBT, TO-247AE
文件頁數(shù)： 3/6頁
文件大?。?/td> 231K
代理商： MGW20N120
3
Motorola TMOS Power MOSFET Transistor Device Data
Figure 1. Output Characteristics, TJ = 25
°
C
Figure 2. Output Characteristics, TJ = 125
°
C
Figure 3. Transfer Characteristics
Figure 4. Collector–to–Emitter Saturation
Voltage versus Junction Temperature
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 5. Capacitance Variation
Figure 6. Gate–to–Emitter Voltage versus
Total Charge
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
Coes
10000
10
25
20
15
5
0
C
10
TJ = 25
°
C
Cres
Cies
100
1000
VCE = 0 V
VGE = 20 V
TJ = 25
°
C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
12.5 V
17.5 V
15 V
10 V
30
20
0
8
4
0
2
6
40
10
50
60
VGE = 20 V
TJ = 125
°
C
VCE, COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
I
12.5 V
17.5 V
15 V
10 V
30
20
0
8
4
0
2
6
40
10
50
60
VCE = 10 V
250
μ
s PULSE WIDTH
TJ = 125
°
C
VGE, GATE–TO–EMITTER VOLTAGE (VOLTS)
I
20
0
15
8
6
5
10
25
°
C
VGE = 15 V
250
μ
s PULSE WIDTH
TJ, JUNCTION TEMPERATURE (
°
C)
1
150
50
0
–50
100
V
IC = 20 A
40
15 A
12
10 A
2
3
4
60
14
9
7
11
13
Qg, TOTAL GATE CHARGE (nC)
16
8
0
70
20
0
V
4
QT
Q1
Q2
TJ = 25
°
C
IC = 20 A
60
40
12
14
6
2
10
65
15
55
35
10
50
30
5
45
25
相關(guān)PDF資料
PDF描述
MGW20N120 Insulated Gate Bipolar Transistor
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