參數(shù)資料
型號(hào)： MH32S72DBFA-6
廠(chǎng)商： Mitsubishi Electric Corporation
英文描述： Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to +105 C; Capacitance:8800uF
中文描述： 2415919104位（33554432 - Word的72位）同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器
文件頁(yè)數(shù)： 5/56頁(yè)
文件大?。?/td> 917K
代理商： MH32S72DBFA-6
2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72AQJA-7, -8
17/Mar./2000
MIT-DS-0371-0.2
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
BASIC FUNCTIONS
The MH32S72AQJA provides basic functions,bank(row)activate,burst read / write,
bank(row)precharge,and auto / self refresh.
Each command is defined by control signals of /RAS,/CAS and /WE at CK rising edge. In
addition to 3 signals,/S,CKE and A10 are used as chip select,refresh option,and
precharge option,respectively.
To know the detailed definition of commands please see the command truth table.
/S
Chip Select : L=select, H=deselect
/RAS
Command
/CAS
Command
/WE
Command
CKE
Refresh Option @refresh command
A10
Precharge Option @precharge or read/write command
CK
define basic commands
Activate(ACT) [/RAS =L, /CAS = /WE =H]
Read(READ) [/RAS =H,/CAS =L, /WE =H]
READ command starts burst read from the active bank indicated by BA.First output
data appears after /CAS latency. When A10 =H at this command,the bank is
deactivated after the burst read(auto-precharge,
READA
).
Write(WRITE) [/RAS =H, /CAS = /WE =L]
WRITE command starts burst write to the active bank indicated by BA. Total data
length to be written is set by burst length. When A10 =H at this command, the bank
is deactivated after the burst write(auto-precharge,
WRITEA
).
Precharge(PRE) [/RAS =L, /CAS =H,/WE =L]
PRE command deactivates the active bank indicated by BA. This command also
terminates burst read / write operation. When A10 =H at this command, both banks
are deactivated(precharge all,
PREA
).
Auto-Refresh(REFA) [/RAS =/CAS =L, /WE =CKE =H]
PEFA command starts auto-refresh cycle. Refresh address including bank address
are generated internally. After this command, the banks are precharged automatically.
ACT command activates a row in an idle bank indicated by BA.
5
相關(guān)PDF資料
PDF描述
MH32S72DBFA-7 Aluminum Electrolytic Capacitor; Capacitor Type:General Purpose; Voltage Rating:10VDC; Capacitor Dielectric Material:Aluminum Electrolytic; Operating Temperature Range:-55 C to +105 C; Capacitance:990uF RoHS Compliant: Yes
MH32S72DBFA-8 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72VJA-6 2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32V7245BST-5 HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM
MH32V7245BST-6 HYPER PAGE MODE 2415919104 - BIT ( 33554432 - WORD BY 72 - BIT ) DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MH32S72DBFA-7 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72DBFA-8 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72PHB-10 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:2415919104-BIT (33554432 - WORD BY 72-BIT)SynchronousDRAM
MH32S72PHB-6 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:2,415,919,104-BIT ( 33,554,432-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH32S72PHB-7 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:2415919104-BIT (33554432 - WORD BY 72-BIT)SynchronousDRAM
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