參數(shù)資料
型號(hào): MH4S64CBMD-10B
廠商: Mitsubishi Electric Corporation
英文描述: 268435456-BIT (4194304-WORD BY 64-BIT)SynchronousDRAM
中文描述: 268435456位(4194304字,64位)SynchronousDRAM
文件頁(yè)數(shù): 19/55頁(yè)
文件大?。?/td> 586K
代理商: MH4S64CBMD-10B
MH4S64BLG -7,-8,-10
268435456-BIT (4194304 - WORD BY 64-BIT)SynchronousDRAM
MITSUBISHI LSIs
( / 55 )
19
MITSUBISHI
ELECTRIC
29.Oct.1998
Preliminary Spec.
Some contents are subject to change without notice.
MIT-DS-0227-0.5
[ BURST WRITE ]
A burst write operation is enabled by setting A9=0 at MRS.A burst write stats in
the same cycle as a write command set.(The latency of data input is 0.) The
burst length can be set to 1,2,4,8,and full-page,like burst read operations.
[ SINGLE WRITE ]
A single write operation is enabled by setting A9=1 at MRS.In a single write
operation,data is written only to the column address specified by the write
command set cycle without regard to the burst length setting.(The latency of data
input is 0.)
DQ
Command
Address
CK
ACT
X
Y
DQ
READ
tRCD
DQ
DQ
DQ
Q0
Q1
Q2
Q3
Q5
Q6
Q4
Q7
Q8
Q0
Q1
Q2
Q3
Q5
Q6
Q4
Q7
Q0
Q1
Q2
Q3
Q0
Q1
Q0
Qm
Q0
Q1
BL=1
BL=2
BL=4
BL=8
BL=FP
Full Page counter rolls over
and continues to count.
m=255
Command
Address
CK
ACT
X
Y
READ
DQ
Q0
tRCD
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