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參數(shù)資料
| 型號(hào)： | MH64S72QJA-6 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 4,831,838,208-BIT ( 64,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| 中文描述： | 4831838208位（64108864 - Word的72位）同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器 |
| 文件頁數(shù)： | 12/56頁 |
| 文件大?。?/td> | 936K |
| 代理商： | MH64S72QJA-6 |
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4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
MH64S72AWJA -6,-7,-8
17/Mar. /2000
MIT-DS-372-0.2
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MITSUBISHI
ELECTRIC
12
POWER ON SEQUENCE
Before starting normal operation, the following power on sequence is necessary to prevent
a SDRAM from damaged or malfunctioning.
1. Apply power and start clock. Attempt to maintain CKE high, DQMB0-7 high and NOP
condition at the inputs.
2. Maintain stable power, stable clock, and NOP input conditions for a minimum of 200us.
3. Issue precharge commands for all banks. (PRE or PREA)
4. After all banks become idle state (after tRP), issue 8 or more auto-refresh commands.
5. Issue a mode register set command to initialize the mode register.
After these sequence, the SDRAM is idle state and ready for normal operation.
MODE REGISTER
Burst Length, Burst Type and /CAS Latency can be programmed by setting the mode
register(MRS). The mode register stores these date until the next MRS command, which
may be issue when both banks are in idle state. After tRSC from a MRS command, the
SDRAM is ready for new command.
R:Reserved for Future Use
FP: Full Page
/S
/RAS
/CAS
/WE
BA0,1 A11-0
CK
V
BL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
BURST
LENGTH
BT= 0
1
2
4
8
R
R
R
FP
BT= 1
1
2
4
8
R
R
R
R
0
1
BURST
TYPE
SEQUENTIAL
INTERLEAVED
A11 A10 A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA1
BA0
0
0
WM
0
0
LTMODE
BT
BL
0
0
CL
0 0 0
0 0 1
0 1 0
0 1 1
1 0 0
1 0 1
1 1 0
1 1 1
LATENCY
MODE
/CAS LATENCY
2
3
R
R
R
R
R
R
0
1
WRITE
MODE
BURST
SINGLE BIT
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| MH64S72QJA-7 | 4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH64S72QJA-8 | 4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH8S64PHC-7 | 536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
| MH8S64QFC-10 | 536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MH64S72QJA-7 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH64S72QJA-8 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH64S72VJG-5 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH64S72VJG-6 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:4,831,838,208-BIT ( 67,108,864-WORD BY 72-BIT ) Synchronous DYNAMIC RAM |
| MH64TAD | 制造商:MTRONPTI 制造商全稱:MTRONPTI 功能描述:8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator |
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