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參數(shù)資料
| 型號： | MHVIC2115NR2 |
| 廠商： | 飛思卡爾半導體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband Integrated Power Amplifier |
| 中文描述： | 射頻LDMOS寬帶集成功率放大器 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 425K |
| 代理商： | MHVIC2115NR2 |
2
RF Device Data
Freescale Semiconductor
MHVIC2115NR2
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Driver Application
(P
out
= +0.2 W CW)
Stage 1, 26 Vdc, I
DQ
= 96 mA
Stage 2, 26 Vdc, I
DQ
= 204 mA
Stage 3, 26 Vdc, I
DQ
= 111 mA
Output Application
(P
out
= +2.5 W CW)
Stage 1, 27 Vdc, I
DQ
= 56 mA
Stage 2, 27 Vdc, I
DQ
= 61 mA
Stage 3, 27 Vdc, I
DQ
= 117 mA
R
θ
JC
3.5
2.7
°
C/W
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°
C
Table 5. Electrical Characteristics
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
W-CDMA Characteristics
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 96 mA, I
DQ2
= 204 mA, I
DQ3
= 111 mA,
P
out
= 23 dBm, 2110-2170 MHz
Power Gain
G
ps
31
34
—
dB
Gain Flatness
G
F
—
0.3
0.5
dB
Input Return Loss
IRL
—
-12
-10
dB
Group Delay
—
—
1.7
—
ns
Phase Linearity
—
—
0.2
—
°
1-Carrier W-CDMA Conditions: Adjacent Channel Power Ratio
@ P
out
= 23 dBm, 5 MHz Offset
ACPR
—
-53
-50
dBc
1-Carrier W-CDMA Conditions: Adjacent Channel Power Ratio
@ P
out
= 28 dBm, 5 MHz Offset
ACPR
—
-50
—
dBc
W-CDMA Characteristics
(In Freescale Test Fixture, 50 ohm system) V
DD
= 27 Vdc, I
DQ1
= 56 mA, I
DQ2
= 61 mA, I
DQ3
= 117 mA,
P
out
= 34 dBm, 2110-2170 MHz
Power Gain
G
ps
—
30
—
dB
Gain Flatness
G
F
—
0.2
—
dB
Input Return Loss
IRL
—
-12
—
dB
Power Added Efficiency
PAE
—
16
—
%
1-Carrier W-CDMA Conditions: Adjacent Channel Power Ratio
@ P
out
= 34 dBm, 4 MHz Offset
ACPR
—
-45
—
dBc
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