參數(shù)資料
型號(hào)： MIC5013BN
廠商： MICREL INC
元件分類： 功率晶體管
英文描述： FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
中文描述： BUF OR INV BASED MOSFET DRIVER, PDIP8
封裝： PLASTIC, DIP-8
文件頁數(shù)： 3/16頁
文件大小： 153K
代理商： MIC5013BN
July 2000
3
MIC5013
MIC5013
Electrical Characteristics
(Note 3) Test circuit. T
A
=
–
55
°
C to +125
°
C, V
+
= 15V
, all switches open, unless
otherwise specified.
Micrel
Parameter
Conditions
V
+
= 32V
Min
Typical
Max
Units
Supply Current, I
7
V
IN
= 0V, S4 closed
V
IN
= V
S
= 32V
Adjust V
IN
for V
GATE
low
Adjust V
IN
for V
GATE
high
Adjust V
IN
for V
GATE
high
V
IN
= 0V
V
IN
= 32V
0.1
10
μ
A
8
20
mA
Logic Input Voltage, V
IN
V
+
= 4.75V
2
V
4.5
V
V
+
=15V
5.0
V
Logic Input Current, I
1
V+ = 32V
–
1
μ
A
1
μ
A
Input Capacitance
Pin 1
5
pF
Gate Drive, V
GATE
S1, S2 closed,
V
+
= 7V, I
6
= 0
V
+
= 15V, I
6
= 100
μ
A
V+ = 15V, V
S
= 15V
V
+
= 32V, V
S
= 32V
13
15
V
V
S
= V+, V
IN
= 5V
S2 closed, V
IN
= 5V
24
27
V
Zener Clamp,
11
12.5
15
V
V
GATE
–
V
SOURCE
Gate Turn-on Time, t
ON
(Note 4)
11
13
16
V
V
IN
switched from 0 to 5V; measure time
for V
GATE
to reach 20V
V
IN
switched from 5 to 0V; measure time
for V
GATE
to reach 1V
I
2
= 200
μ
A
S2 closed, V
IN
= 5V,
Increase I
3
60
200
μ
s
Gate Turn-off Time, t
OFF
4
10
μ
s
Threshold Bias Voltage, V
2
Current Sense Trip Voltage,
1.7
2
2.2
V
V
+
= 7V,
S4 closed
75
105
135
mV
V
SENSE
–
V
SOURCE
I
2
= 100
μ
A
V
+
= 15V
V
S
= 4.9V, S4 open
S4 closed
70
100
130
mV
150
210
270
mV
I
2
= 200
μ
A
V
+
= 32V
V
S
= 11.8V, S4 open
V
S
= 0V, S4 open
V
S
= 25.5V, S4 open
140
200
260
mV
360
520
680
mV
I
2
= 500
μ
A
350
500
650
mV
Peak Current Trip Voltage,
V
SENSE
–
V
SOURCE
Fault Output Voltage, V
8
S3, S4 closed,
V
+
= 15V, V
IN
= 5V
V
IN
= 0V, I
8
=
–
100
μ
A
V
IN
= 5V, I
8
= 100
μ
A, current sense tripped
1.6
2.1
V
0.4
1
V
14
14.6
V
Note 1
Absolute Maximum Ratings
indicate limits beyond which damage to the device may occur. Electrical specifications do not apply when
operating the device beyond its specified
Operating Ratings
.
The MIC5010 is ESD sensitive.
Minimum and maximum
Electrical Characteristics
are 100% tested at T
= 25
°
C and T
A
= 85
°
C, and 100% guaranteed over the entire
range. Typicals are characterized at 25
°
C and represent the most likely parametric norm.
Test conditions reflect worst case high-side driver performance. Low-side and bootstrapped topologies are significantly faster
—
see
Applications Information
.
Note 2
Note 3
Note 4
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