參數(shù)資料
型號(hào): MIC5013BN
廠(chǎng)商: MICREL INC
元件分類(lèi): 功率晶體管
英文描述: FPGA 1000000 SYSTEM GATE 1.8 VOLT - NOT RECOMMENDED for NEW DESIGN
中文描述: BUF OR INV BASED MOSFET DRIVER, PDIP8
封裝: PLASTIC, DIP-8
文件頁(yè)數(shù): 7/16頁(yè)
文件大?。?/td> 153K
代理商: MIC5013BN
July 2000
7
MIC5013
MIC5013
Applications Information
(Continued)
Micrel
Fault
V+
Gate
1
2
3
4
8
MIC5013
Input
Gnd
7
6
5
Thresh
Sense
Source
IRF540
10μF
10k
10m
IRC 4LPW-5
Figure 2. Low-Side Driver with
Current Shunt
LOAD
Control Input
=7 to 15V
V+
+
(International Resistive Company)
V
LOAD
I =20A (trip current)
L
V
TRIP
= 200mV
V
TRIP
L
2200
1000
V
TRIP
For this example:
R =
R =
R
R
TH
Fault
V+
Gate
1
2
3
4
8
MIC5013
Input
Gnd
7
6
5
Thresh
Sense
Source
=24V
IRF541
10μF
100
20k
24k
18m
IRC 4LPW-5*
R1
Figure 3. High-Side Driver
with Current Shunt
LOAD
Control Input
V+
+
*International Resistive Company
R2
R1=
R2=100
R =
R =
1mA
V
100mV+
2200
1000
V
TRIP
+
I
L
For this example:
I =10A (trip current)
V =100mV
V
TRIP
R
R
TH
Circuit Topologies
The MIC5013 is suited for use in high- or low-side driver
applications with over-current protection for both current-
sensing and standard MOSFETs. In addition, the MIC5013
works well in applications where, for faster switching times,
the supply is bootstrapped from the MOSFET source out-
put. Low voltage, high-side drivers (such as shown in the
Test Circuit) are the slowest; their speed is reflected in the
gate turn-on time specifications. The fastest drivers are the
low-side and bootstrapped high-side types. Load current
switching times are often much faster than the time to full
gate enhancement, depending on the circuit type, the
MOSFET, and the load. Turn-off times are essentially the
same for all circuits (less than 10
μ
s to V
GS
= 1V). The choice
of one topology over another is based on a combination of
considerations including speed, voltage, and desired sys-
tem characteristics. Each topology is described in this
section. Note that I
L
, as used in the design equations, is the
load current that just trips the over-current comparator.
Low-Side Driver with Current Shunt
(Figure 2). The over-
current comparator monitors RS and trips if I
L
×
R
S
exceeds
V
TRIP
. R is selected to produce the desired trip voltage.
As a guideline, keep V
TRIP
within the limits of 100mV and
500mV (R
TH
= 3.3k
to 20k
). Thresholds at the high end
offer the best noise immunity, but also compromise switch
drop (especially in low voltage applications) and power
dissipation.
The trip current is set higher than the maximum expected
load current
typically twice that value. Trip point accuracy
is a function of resistor tolerances, comparator offset (only
a few millivolts), and threshold bias voltage (V2). The values
shown in Figure 2 are designed for a trip current of 20
amperes. It is important to ground pin 4 at the current shunt
R
S
, to eliminate the effects of ground resistance.
A key advantage of the low-side topology is that the load
supply is limited only by the MOSFET BVDSS rating.
Clamping may be required to protect the MOSFET drain
terminal from inductive switching transients. The MIC5013
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