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參數資料
| 型號： | MIG50Q6CSB1X |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Intelligent Power Module Silicon N Channel IGBT |
| 中文描述： | 東芝智能功率模塊IGBT的硅?頻道 |
| 文件頁數： | 4/11頁 |
| 文件大小： | 169K |
| 代理商： | MIG50Q6CSB1X |
MIG50Q6CSB1X
2003-02-19
4
Maximum Ratings
(unless otherwise specified, T
j
25°C)
Stage
Characteristic
Condition
Symbol
Ratings
Unit
Supply voltage
P-N power terminal
V
CC
900
V
Collector-emitter voltage
V
CES
1200
V
Collector current
Tc 25°C, DC
I
C
50
A
Forward current
Tc 25°C, DC
I
F
50
A
Collector power dissipation
Tc 25°C
P
C
580
W
Inverter
Junction temperature
T
j
150
°C
Control supply voltage
V
D
-GND terminal
V
D
20
V
Input voltage
IN-GND terminal
V
IN
20
V
Fault output voltage
FO-GND terminal
V
FO
20
V
Control
Fault output current
FO sink current
I
FO
14
mA
Operating temperature
Tc
20 to 100
°C
Storage temperature range
T
stg
40 to 125
°C
Isolation voltage
AC 1 minute
V
ISO
2500
V
Screw torque (terminal)
M4
2
N·m
Module
Screw torque (mounting)
M5
3
N·m
Electrical Characteristics
1. Inverter Stage
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
T
j
25°C
1
Collector cut-off current
I
CEX
V
CE
1200 V
T
j
125°C
10
mA
T
j
25°C
2.2
2.6
Collector-emitter saturation voltage
V
CE (sat)
V
D
15 V,
I
C
50 A,
V
IN
15 V
0 V
T
j
125°C
3.0
V
Forward voltage
V
F
I
F
50 A, T
j
25°C
2.4
2.8
V
t
on
2.0
3.0
t
c (on)
0.3
t
rr
0.3
t
off
1.5
2.5
Switching time
t
c (off)
V
CC
600 V, I
C
50 A,
V
D
15 V, V
IN
15 V
T
j
25°C, Inductive load
0 V,
(Note 1)
0.4
s
Note 1: Switching time test circuit and timing chart.
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