參數(shù)資料
型號: MIG50Q6CSB1X
廠商: Toshiba Corporation
英文描述: TOSHIBA Intelligent Power Module Silicon N Channel IGBT
中文描述: 東芝智能功率模塊IGBT的硅?頻道
文件頁數(shù): 8/11頁
文件大?。?/td> 169K
代理商: MIG50Q6CSB1X
MIG50Q6CSB1X
2003-02-19
8
100
0
0
50
5
2
25
75
1
3
4
VD 17 V
VD 13 V
VD 15 V
Common emitter
Tj 25°C
I
C
– V
CE
I
C
– V
CE
Switching time – I
C
Switching time – I
C
I
F
– V
F
trr, Irr – I
F
Collector-emitter voltage V
CE
(V)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
Collector current I
C
(A)
Forward voltage V
F
(V)
Forward current I
F
(A)
C
C
C
C
S
S
P
R
F
F
100
0
0
50
5
2
25
75
1
3
4
VD 17 V
VD 15 V
Common emitter
Tj 125°C
VD 13 V
0
10
1
0.3
0.1
0.03
0.01
3
20
40
60
10
30
50
Tj 25°C
VCC 600 V
VD 15 V
L-LOAD
ton
toff
tc (off)
tc (on)
0
10
1
0.3
0.1
0.03
0.01
3
20
40
60
10
30
50
Tj 125°C
VCC 600 V
VD 15 V
L-LOAD
ton
toff
tc (off)
tc (on)
100
0
0
50
5
2
25
75
1
3
4
Common cathode
: Tj 25°C
: Tj 125°C
0
100
1
10
20
40
60
Irr
Common cathode
: Tj 25°C
: Tj 125°C
trr
3
30
10
50
30
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