參數(shù)資料
型號(hào): MJ11013
廠商: MOSPEC SEMICONDUCTOR CORP.
英文描述: POWER TRANSISTORS(30A,60-120V,200W)
中文描述: 功率晶體管(30A條,60 - 120伏特,功率200W)
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 157K
代理商: MJ11013
2
Motorola Bipolar Power Transistor Device Data
MJ11012
MJ11013, MJ11014
(VCE = 60 Vdc, RBE = 1k ohm)
(VCE = 60 Vdc, RBE = 1k ohm, TC = 150 C)
60
90
(VBE = 5 Vdc, IC = 0)
MJ11012
MJ11012
1
5
Collector–Emitter Leakage Current
1
mAdc
(IC = 30 Adc, VCE = 5 Vdc)
Collector–Emitter Saturation Voltage
VCE(sat)
200
Vdc
(IC = 20 A, IB = 200 mAdc)
3.5
(1) Pulse Test: Pulse Width
=
300
μ
s, Duty Cycle
2.0%.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJ11014 制造商:Solid State Devices Inc (SSDI) 功能描述:TO 3 30 Amp Darlington Transistors NPN
MJ11015 功能描述:達(dá)林頓晶體管 30A 120V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
MJ11015 制造商:SPC Multicomp 功能描述:TRANSISTOR DARLINGTON TO-3
MJ11015_08 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Current Complementary Silicon Transistors
MJ11015G 功能描述:達(dá)林頓晶體管 30A 120V Bipolar Power PNP RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel