參數(shù)資料
型號: MJ15022
廠商: MOSPEC SEMICONDUCTOR CORP.
英文描述: POWER TRANSISTOR(16A,200-250V,250W)
中文描述: 功率晶體管(16A條,200 - 250V,250W的)
文件頁數(shù): 1/4頁
文件大?。?/td> 153K
代理商: MJ15022
1
Motorola Bipolar Power Transistor Device Data
The MJ15022 and MJ15024 are PowerBase power transistors designed for high
power audio, disk head positioners and other linear applications.
High Safe Operating Area (100% Tested) —
2 A @ 80 V
High DC Current Gain —
hFE = 15 (Min) @ IC = 8 Adc
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
VCBO
VEBO
VCEX
IC
MJ15022
200
350
MJ15024
250
400
Unit
Vdc
Vdc
Emitter–Base Voltage
VCEO
5
Vdc
Collector–Emitter Voltage
400
Vdc
Collector Current — Continuous
16
Adc
Preferred
devices are Motorola recommended choices for future use and best overall value.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ15022/D
16 AMPERE
SILICON
POWER TRANSISTORS
200 AND 250 VOLTS
250 WATTS
*Motorola Preferred Device
TO–204AA
REV 7
相關PDF資料
PDF描述
MJ2955A 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60, 120 VOLTS 115, 180 WATTS
MJ2955A COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
MJ15015 COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
MJ15016 COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
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相關代理商/技術參數(shù)
參數(shù)描述
MJ15022_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors
MJ15022G 功能描述:兩極晶體管 - BJT 16A 200V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJ15023 功能描述:兩極晶體管 - BJT 16A 200V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MJ15023 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-3
MJ15023_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors