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參數(shù)資料
| 型號： | MJ15022 |
| 廠商： | MOSPEC SEMICONDUCTOR CORP. |
| 英文描述： | POWER TRANSISTOR(16A,200-250V,250W) |
| 中文描述： | 功率晶體管（16A條,200 - 250V，250W的） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 153K |
| 代理商： | MJ15022 |
2
Motorola Bipolar Power Transistor Device Data
OFF CHARACTERISTICS
Collector Cutoff Current
MJ15024
250
—
—
250
μ
Adc
(VCE = 150 Vdc, IB = 0)
(VCE = 200 vdc, IB = 0)
Emitter Cutoff Current
MJ15022
MJ15024
IEBO
—
—
500
500
μ
Adc
(VCE = 50 Vdc, t = 0.5 s (non–repetitive))
(VCE = 80 Vdc, t = 0.5 s (non–repetitive))
ON CHARACTERISTICS
DC Current Gain
hFE
2
—
—
(IC = 8 Adc, IB = 0.8 Adc)
Base–Emitter On Voltage
VBE(on)
—
—
—
1.4
4.0
2.2
Vdc
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
—
500
pF
100
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.1
0.2
0.5
10
1 k
20
TC = 25
°
C
50
250
0.1
I
0.2
1.0
5.0
50
500
100
10
20
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN
LIMITED
There are two limitations on the powerhandling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200 C; TC is
variable depending on conditions. At high case tempera-
tures, thermal limitations will reduce the power that can be
handled to values Ion than the limitations imposed by second
breakdown.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJ15022_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors |
| MJ15022G | 功能描述:兩極晶體管 - BJT 16A 200V 250W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15023 | 功能描述:兩極晶體管 - BJT 16A 200V 250W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJ15023 | 制造商:SPC Multicomp 功能描述:TRANSISTOR PNP TO-3 |
| MJ15023_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Power Transistors |
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