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參數(shù)資料
| 型號： | MJB42CG |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 100 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, PLASTIC, CASE 418B-04, D2PAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 0K |
| 代理商： | MJB42CG |
MJB41C (NPN),
http://onsemi.com
3
t, TIME (ms)
1.0
0.01
0.1
r(t)
,TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
1.0
100
ZqJC(t) = r(t) RqJC
RqJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) ZqJC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.02
0.01
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02
0.05
0.2
0.5
2.0
5.0
200
500
10
20
50
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
20
5.0
60
100
Figure 5. ActiveRegion Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25°C
(SINGLE PULSE)
1.0ms
2.0
1.0
10
5.0
I C
,COLLECT
OR
CURRENT
(AMP)
0.5ms
CURVES APPLY BELOW RATED VCEO
3.0
0.3
40
80
5.0ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1
0.4
0.6
4.0
0.06
1.0
2.0
0.2
IC, COLLECTOR CURRENT (AMP)
Figure 6. TurnOff Time
5.0
t,TIME
(s)μ
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
6.0
1.0
3.0
5.0
20
0.5
10
2.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C,
CAP
ACIT
ANCE
(pF)
200
100
70
50
30
50
TJ = 25°C
VCC = 30 V
IC/IB = 10
IB1 = IB2
Cib
Cob
3.0
ts
tf
TJ = 25°C
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