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Semiconductor Components Industries, LLC, 2011
June, 2011 Rev. 2
1
Publication Order Number:
MJB5742/D
MJB5742T4G
NPN Silicon Power
Darlington Transistors
The Darlington transistors are designed for highvoltage power
switching in inductive circuits.
Features
These Devices are PbFree and are RoHS Compliant
Applications
Small Engine Ignition
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO(sus)
400
Vdc
CollectorEmitter Voltage
VCEV
800
Vdc
EmitterBase Voltage
VEB
8
Vdc
Collector Current
Continuous
IC
ICM
8
16
Adc
Base Current
Continuous
IB
IBM
2.5
5
Adc
Total Device Dissipation @ TA = 25_C
Derate above 25°C
PD
2
0.016
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
100
0.8
W
W/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to +150
_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, JunctiontoCase
RqJC
1.25
_C/W
Thermal Resistance, JunctiontoAmbient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
275
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
POWER DARLINGTON
TRANSISTORS
8 AMPERES, 400 VOLTS
100 WATTS
http://onsemi.com
≈ 100
≈ 50
MARKING
DIAGRAM
COLLECTOR 2,4
BASE
1
EMITTER 3
B5742G
AYWW
B5742 = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= PbFree Package
D2PAK
CASE 418B
STYLE 1
Device
Package
Shipping
ORDERING INFORMATION
MJB5742T4G
D2PAK
(PbFree)
800 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.