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參數(shù)資料
| 型號： | MJD112 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | NEUTRAL LINK KIT, FG-B; RoHS Compliant: NA |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 6/6頁 |
| 文件大小： | 306K |
| 代理商： | MJD112 |
6
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 369A–13
ISSUE W
STYLE 1:
PIN 1.
BASE
COLLECTOR
EMITTER
COLLECTOR
2.
3.
4.
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
V
S
A
K
–T–
SEATING
R
B
F
G
D
3 PL
0.13 (0.005)
M
T
C
E
J
H
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
MIN
0.235
0.250
0.086
0.027
0.033
0.037
0.090 BSC
0.034
0.018
0.350
0.175
0.050
0.030
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
2.29 BSC
0.87
0.46
8.89
4.45
1.27
0.77
MAX
6.35
6.73
2.38
0.88
1.01
1.19
MILLIMETERS
INCHES
0.040
0.023
0.380
0.215
0.090
0.050
1.01
0.58
9.65
5.46
2.28
1.27
CASE 369–07
ISSUE K
STYLE 1:
PIN 1.
BASE
COLLECTOR
EMITTER
COLLECTOR
2.
3.
4.
D
A
K
B
R
V
S
F
L
G
2 PL
0.13 (0.005)
M
T
E
C
U
J
H
–T–
SEATING
Z
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
MIN
0.235
0.250
0.086
0.027
0.033
0.037
0.180 BSC
0.034
0.018
0.102
0.090 BSC
0.175
0.020
0.020
0.030
0.138
MAX
0.250
0.265
0.094
0.035
0.040
0.047
MIN
5.97
6.35
2.19
0.69
0.84
0.94
4.58 BSC
0.87
0.46
2.60
2.29 BSC
4.45
0.51
0.51
0.77
3.51
MAX
6.35
6.73
2.38
0.88
1.01
1.19
MILLIMETERS
INCHES
0.040
0.023
0.114
1.01
0.58
2.89
0.215
0.050
–––
0.050
–––
5.46
1.27
–––
1.27
–––
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
1
2
3
4
How to reach us:
USA/EUROPE
: Motorola Literature Distribution;
P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447
JAPAN
: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,
6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315
MFAX
: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609
INTERNET
: http://Design–NET.com
HONG KONG
: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
MJD112/D
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| MJD112-001 | 功能描述:達(dá)林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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