參數(shù)資料
型號： MJD112
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： NEUTRAL LINK KIT, FG-B; RoHS Compliant: NA
中文描述： 2 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, CASE 369C-01, DPAK-3
文件頁數(shù)： 5/6頁
文件大?。?/td> 306K
代理商： MJD112
5
Motorola Bipolar Power Transistor Device Data
NPN MJD112
PNP MJD117
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0
*APPLIED FOR IC/IB < hFE/3
0.1
0.6
–55
°
C TO 25
°
C
0.4
1
–4.8
2
4
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
–0.4
,
I
μ
103
102
101
100
+0.2 +0.4
+0.6
TJ = 150
°
C
100
°
C
REVERSE
FORWARD
25
°
C
–0.2
VCE = 30 V
105
–0.6
+0.8
+1
+1.2 +1.4
104
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10–1
0
+0.4
,
I
μ
103
102
101
100
–0.2
–0.4 –0.6
105
+0.6
+0.2
–0.8
–1
–1.2 –1.4
+0.8
–4
–3.2
–2.4
–1.6
–0.8
θ
VC FOR VBE
25
°
C TO 150
°
C
25
°
C TO 150
°
C
*
θ
VC FOR VCE(sat)
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.2
0.1
0.6
0.4
1
2
4
Figure 10. Temperature Coefficients
Figure 11. Collector Cut–Off Region
Figure 12. Darlington Schematic
BASE
EMITTER
COLLECTOR
≈
8 k
≈
120
PNP
BASE
EMITTER
COLLECTOR
≈
8 k
≈
120
NPN
0
–4.8
+0.8
–4
–3.2
–2.4
–1.6
–0.8
V
θ
°
V
θ
°
–55
°
C TO 25
°
C
*APPLIES FOR IC/IB < hFE/3
*
θ
VC FOR VCE(sat)
θ
VB FOR VBE
25
°
C TO 150
°
C
–55
°
C TO 25
°
C
25
°
C TO 150
°
C
–55
°
C TO 25
°
C
VCE = 30 V
REVERSE
FORWARD
TJ = 150
°
C
100
°
C
25
°
C
相關(guān)PDF資料
PDF描述
MJD1121 SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
MJD112T4 SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS
MJD112 D-PAK for Surface Mount Applications
MJD112 EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
MJD112L EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD112_03 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
MJD112_06 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Silicon Darlington Transistor
MJD112_10 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:Complementary power Darlington transistors
MJD112_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Darlington Power Transistors
MJD112-001 功能描述:達林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*