參數(shù)資料
型號(hào): MJD112T4
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Complementary Darlington Power Transistors
中文描述: 2 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, CASE 369C-01, DPAK-3
文件頁(yè)數(shù): 2/6頁(yè)
文件大?。?/td> 306K
代理商: MJD112T4
2
Motorola Bipolar Power Transistor Device Data
(TC = 25 C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS – continued
Symbol
Min
Max
Unit
Collector–Cutoff Current
ICEX
μ
Adc
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 4 Adc, IB = 40 mAdc)
500
1000
12,000
3
4
Vdc
2.8
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
Output Capacitance
Cob
25
MHz
pF
MJD112
0.04
0.2
4
0.1
0.06
0.6
1
4
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
t
μ
2
1
0.8
0.6
0.4
0.2
ts
tf
Figure 1. Switching Times Test Circuit
Figure 2. Switching Times
V2
APPROX
+8 V
0
8 k
SCOPE
VCC
–30 V
RC
51
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
25
μ
s
tr, tf
10 ns
DUTY CYCLE = 1%
+ 4 V
tr
td @ VBE(off) = 0 V
PNP
NPN
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
V1
APPROX
–12 V
TUT
RB
D1
60
0.4
2
IB1 = IB2
TJ = 25
°
C
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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