- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371114 > MJD112T4 (ON SEMICONDUCTOR) Complementary Darlington Power Transistors PDF資料下載
參數(shù)資料
| 型號： | MJD112T4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Darlington Power Transistors |
| 中文描述： | 2 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 306K |
| 代理商： | MJD112T4 |
3
Motorola Bipolar Power Transistor Device Data
Figure 3. Thermal Response
t, TIME OR PULSE WIDTH (ms)
1
0.01
1000
0.3
0.2
0.07
0.05
r
R
θ
JC(t) = r(t) R
θ
JC
R
θ
JC = 6.25
°
C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk)
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
0.01
T
0.7
0.5
0.1
0.03
0.02
0.02 0.03
0.05
0.1
0.2
0.3
0.5
1
2
3
5
10
20
30
50
100
200 300
500
0.2
SINGLE PULSE
D = 0.5
0.05
0.1
0.01
I
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
Figure 5. Power Derating
2
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.3
0.2
100
5
3
2
0.5
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
5
20
3
TJ = 150
°
C
CURVES APPLY BELOW RATED VCEO
100
μ
s
1 ms
dc
0.1
1
7
10
10
7
30
25
25
T, TEMPERATURE (
°
C)
0
50
75
100
125
150
20
15
10
5
P
2.5
0
2
1.5
1
0.5
TA
TC
TA
SURFACE
MOUNT
TC
0.7
5 ms
50
70
200
500
μ
s
ACTIVE–REGION SAFE–OPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150 C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150 C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
C
VR, REVERSE VOLTAGE (VOLTS)
Cib
0.04
30
1
4
10
40
TC = 25
°
C
200
10
50
70
100
0.1
2
6
20
20
PNP
NPN
0.6
0.4
0.2
0.06
Figure 6. Capacitance
Cob
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MJD112T4G | Complementary Darlington Power Transistors |
| MJD112 | NEUTRAL LINK KIT, FG-B; RoHS Compliant: NA |
| MJD1121 | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
| MJD112T4 | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
| MJD112 | D-PAK for Surface Mount Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD112T4 | 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR NPN 100V TO-252 制造商:STMicroelectronics 功能描述:DARLINGTON TRANSISTOR, NPN, 100V, TO-252 |
| MJD112T4G | 功能描述:達林頓晶體管 2A 100V Bipolar Power NPN RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112TF | 功能描述:達林頓晶體管 NPN Si Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MJD112-TP | 功能描述:TRANS NPN 100V 2A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| MJD117 | 功能描述:達林頓晶體管 2A 100V Bipolar RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。