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參數(shù)資料
| 型號： | MJD243T4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon Plastic Power Transistor |
| 中文描述： | 4 A, 100 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, PLASTIC, CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 209K |
| 代理商： | MJD243T4G |
3
Motorola Bipolar Power Transistor Device Data
V
θ
°
IC, COLLECTOR CURRENT (AMP)
h
300
200
500
0.06
0.1
0.4
4
0.04
100
70
50
10
7
0.2
5
1
2
0.6
25
°
C
TJ = 150
°
C
–55
°
C
VCE = 1 V
VCE = 2 V
Figure 4. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
θ
VC FOR VCE(sat)
θ
VB FOR VBE
+2.5
+2
+1.5
+1
0
–0.5
–1
–1.5
–2
+0.5
–2.5
*APPLIES FOR IC/IB
≤
hFE/3
25
°
C to 150
°
C
–55
°
C to 25
°
C
25
°
C to 150
°
C
–55
°
C to 25
°
C
Figure 5. “On” Voltages
+11 V
25
μ
s
0
–9 V
RB
–4 V
D1
SCOPE
VCC
+30 V
RC
tr, tf
≤
10 ns
DUTY CYCLE = 1%
51
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
≈
100 mA
MSD6100 USED BELOW IB
≈
100 mA
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
FOR PNP TEST CIRCUIT,
REVERSE ALL POLARITIES
Figure 6. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
TJ = 25
°
C
VCC = 30 V
IC/IB = 10
t
td @ VBE(off) = 5 V
Figure 7. Switching Time Test Circuit
tr
1.4
IC, COLLECTOR CURRENT (AMP)
1.2
1
0.4
0.2
0
TJ = 25
°
C
V
VBE(sat) @ IC/IB = 10
VCE(sat)
VBE @ VCE = 1 V
Figure 8. Turn–On Time
2000
IC, COLLECTOR CURRENT (AMP)
70
50
1000
700
500
300
200
100
Figure 9. Turn–Off Time
t
30
20
TJ = 25
°
C
VCC = 30 V
IC/IB = 10
IB1 = IB2
ts
tf
30
20
0.06
0.1
0.4
4
0.04
0.2
1
2
0.6
0.8
0.6
IC/IB = 10
5
0.06
0.1
0.4
4
0.04
0.2
1
2
0.6
0.06
0.1
0.4
4
0.04
0.2
1
2
0.6
0.06
0.1
0.4
4
0.04
0.2
1
2
0.6
300
200
500
100
70
50
10
7
5
30
20
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MJD253 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor |
| MJD253-001 | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD253-1 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Silicon Plastic Power Transistor DPAK-3 for Surface Mount Applications |
| MJD253-1G | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MJD253T4 | 功能描述:兩極晶體管 - BJT 4A 100V 12.5W PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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