參數(shù)資料
型號: MJD41C
廠商: MOTOROLA INC
元件分類: 功率晶體管
英文描述: SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
中文描述: 6 A, 100 V, NPN, Si, POWER TRANSISTOR
文件頁數(shù): 3/5頁
文件大小: 47K
代理商: MJD41C
2001 Fairchild Semiconductor Corporation
M
Rev. A2, June 2001
Typical Characteristics
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Figure 7. Power Derating
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MJD41C_06 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD41C_11 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Complementary Power Transistors
MJD41C-1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
MJD41CNPN 制造商:TYSEMI 制造商全稱:TY Semiconductor Co., Ltd 功能描述:Lead Formed for Surface Mount Applications in Plastic Sleeves
MJD41CRL 功能描述:兩極晶體管 - BJT 6A 100V 20W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2